130 nm and 150 nm line-and-space critical-dimension control evaluation using XS-1 x-ray stepper

1998 ◽  
Vol 16 (6) ◽  
pp. 3509 ◽  
Author(s):  
Y. Tanaka
Keyword(s):  
Critical Dimension ◽  
X Ray ◽  
Dimension Control ◽  
Control Evaluation

Critical-dimension control for 100 nm patterns in x-ray lithography

1999 ◽  
Vol 17 (6) ◽  
pp. 3415 ◽  
Author(s):  
Y. Tanaka ◽  
T. Iwamoto ◽  
K. Fujii ◽  
Y. Kikuchi ◽  
Y. Matsui ◽  
...  
Keyword(s):  
Critical Dimension ◽  
X Ray ◽  
Dimension Control

Overlay and critical dimension control in 100-nm ULSI processes using TaBN x-ray masks and the XRA x-ray stepper

2001 ◽  
Author(s):  
Kiyoshi Fujii ◽  
Yuusuke Tanaka ◽  
Toshiyuki Iwamoto ◽  
Shinji Tsuboi ◽  
Hiroaki Sumitani ◽  
...  
Keyword(s):  
Critical Dimension ◽  
X Ray ◽  
Dimension Control

scholarly journals Critical-dimension control for 130-nm patterns in x-ray lithography.

1999 ◽  
Vol 12 (4) ◽  
pp. 577-582
Author(s):  
Yuusuke Tanaka ◽  
Toshiyuki Iwamoto ◽  
Kiyoshi Fujii ◽  
Yukiko Kikuchi ◽  
Yasuji Matsui
Keyword(s):  
Critical Dimension ◽  
X Ray ◽  
Dimension Control

Spectroscopic ellipsometric scatterometry: sources of errors in critical dimension control

2003 ◽  
Author(s):  
Jerome Hazart ◽  
Gilles Grand ◽  
Philippe Thony ◽  
David Herisson ◽  
Stephanie Garcia ◽  
...  
Keyword(s):  
Critical Dimension ◽  
Dimension Control

Exploring the limitations of x-ray reflectivity as a critical dimension pattern shape metrology

2008 ◽  
Author(s):  
Hae-Jeong Lee ◽  
Sangcheol Kim ◽  
Christopher L. Soles ◽  
Eric K. Lin ◽  
Wen-Li Wu
Keyword(s):  
Critical Dimension ◽  
X Ray ◽  
Pattern Shape

Critical dimension control using ultrashort laser for improving wafer critical dimension uniformity

2015 ◽  
Vol 14 (3) ◽  
pp. 033510 ◽  
Author(s):  
Dan Avizemer ◽  
Ofir Sharoni ◽  
Sergey Oshemkov ◽  
Avi Cohen ◽  
Asaf Dayan ◽  
...  
Keyword(s):  
Critical Dimension ◽  
Dimension Control ◽  
Ultrashort Laser

scholarly journals X-ray Metrology for the SemiconductorIndustry Tutorial

2019 ◽  
Vol 124 ◽  
Author(s):  
Daniel F. Sunday ◽  
Wen-li Wu ◽  
Scott Barton ◽  
R. Joseph Kline
Keyword(s):  
Data Processing ◽  
Small Angle ◽  
Semiconductor Industry ◽  
Critical Dimension ◽  
Next Generation ◽  
Dimensional Metrology ◽  
X Ray ◽  
X Ray Scattering ◽  
Short Course ◽  
Ray Scattering

The semiconductor industry is in need of new, in-line dimensional metrology methods with higherspatial resolution for characterizing their next generation nanodevices. The purpose of this short course is to train the semiconductor industry on the NIST-developed critical dimension small angle X-ray scattering (CDSAXS) method. The topics will include both data processing and instrumentation. The short course will also provide an opportunity for discussion of the requirements for CDSAXS and the necessary improvements in X-ray source technology. Expected audience include semiconductor manufacturers, equipment manufacturers, and component manufacturers. The presentations were made at “X-ray Metrology for the Semiconductor Industry” short course at the National Institute of Standards and Technology on Aug. 25, 2016.

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