High-density, inductively coupled plasma etch of sub half-micron critical layers: Transistor polysilicon gate definition and contact formation

1998 ◽  
Vol 16 (5) ◽  
pp. 2699 ◽  
Author(s):  
A. C. Westerheim
Keyword(s):  
Inductively Coupled Plasma ◽  
High Density ◽  
Plasma Etch ◽  
Contact Formation ◽  
Inductively Coupled ◽  
Polysilicon Gate ◽  
Critical Layers

GaN Etching in BCl3/Cl2 Plasmas

1998 ◽  
Vol 512 ◽  
Author(s):  
R. J. Shul ◽  
C. I. H. Ashby ◽  
C. G. Willison ◽  
L. Zhang ◽  
J. Han ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Plasma Chemistry ◽  
High Plasma ◽  
High Density ◽  
Chamber Pressure ◽  
Plasma Etch ◽  
Source Power ◽  
Inductively Coupled ◽  
High Volatility ◽  
Gan Etching

ABSTRACTGaN etching can be affected by a wide variety of parameters including plasma chemistry and plasma density. Chlorine-based plasmas have been the most widely used plasma chemistries to etch GaN due to the high volatility of the GaClx and NClx etch products. The source of Cl and the addition of secondary gases can dramatically influence the etch characteristics primarily due to their effect on the concentration of reactive Cl generated in the plasma. In addition, high-density plasma etch systems have yielded high quality etching of GaN due to plasma densities which are 2 to 4 orders of magnitude higher than reactive ion etch (RIE) plasma systems. The high plasma densities enhance the bond breaking efficiency of the GaN, the formation of volatile etch products, and the sputter desorption of the etch products from the surface. In this study, we report GaN etch results for a high-density inductively coupled plasma (ICP) as a function of BCl3:Cl2 flow ratio, dc-bias, chamber pressure, and ICP source power. GaN etch rates ranging from ∼100 Å/min to > 8000 Å/min were obtained with smooth etch morphology and anisotropic profiles.

Fabrication and repair of GaN nanorods by plasma etching with self-assembled nickel nanomasks

2021 ◽  
Author(s):  
Shiying Zhang ◽  
Lei Zhang ◽  
Yueyao Zhong ◽  
Guodong Wang ◽  
Qingjun Xu
Keyword(s):  
Inductively Coupled Plasma ◽  
Average Diameter ◽  
Etching Time ◽  
X Ray Diffraction ◽  
Plasma Etch ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Self Organized ◽  
Gan Film ◽  
Koh Etching

High crystal quality GaN nanorod arrays were fabricated by inductively coupled plasma (ICP) etching using self-organized nickel (Ni) nano-islands mask on GaN film and subsequent repaired process including annealing in ammonia and KOH etching. The Ni nano-islands have been formed by rapid thermal annealing, whose density, shape, and dimensions were regulated by annealing temperature and Ni layer thickness. The structural and optical properties of the nanorods obtained from GaN epitaxial layers were comparatively studied by high-resolution X-ray diffraction (HRXRD), Raman spectroscopy and photoluminescence (PL). The results indicate that damage induced by plasma can be successfully healed by annealing in NH3 at 900 °C. The average diameter of the as-etched nanorod was effectively reduced and the plasma etch damage was removed after a wet treatment process in a KOH solution. It was found that the diameter of the GaN nanorod was continuously reduced and the PL intensity first increased, then reduced and finally increased as the KOH etching time sequentially increased.

Nanometer-Scale SOI Based Y-Branch Couplers for High Density Optical Integrated Circuits

2013 ◽  
Vol 562-565 ◽  
pp. 996-1000
Author(s):  
Zhen Zhou ◽  
Zheng Fang Dong ◽  
Li Shuang Feng ◽  
Kun Bo Wang ◽  
Yin Zhou Zhi
Keyword(s):  
Integrated Circuits ◽  
Inductively Coupled Plasma ◽  
Beam Propagation Method ◽  
High Density ◽  
Propagation Loss ◽  
Nanometer Scale ◽  
Optical Integrated Circuits ◽  
Inductively Coupled ◽  
Branch Angle ◽  
Strong Confinement

SOI Ridge nanowire waveguide (RNW) has advantages of strong confinement of optical mode, low propagation loss, small bend radius and fully compatible with CMOS technique, etc. An ultra-compact Y-branch coupler based on SOI RNW was designed and fabricated. Based on the finite-difference beam propagation method (FD-BPM), key parameters of the coupler were analyzed. Then the device was fabricated by electron beam lithography (EBL) and inductively coupled plasma (ICP) reactive ion etching. Results showed that the propagation loss of RNW was 1.89 dB/mm, and the radiation loss of the coupler with branch angle of 30° was only 0.66 dB. Compared with traditional Y-branch coupler, the proposed structure were more promising for high density optical integrated circuits.

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