In situ scanning tunneling microscope studies of high-energy, focused ion implantation of Ga into GaAs: Direct observation of ion beam profiles

1998 ◽  
Vol 16 (4) ◽  
pp. 2570 ◽  
Author(s):  
G. A. C. Jones
Keyword(s):  
Ion Implantation ◽  
Direct Observation ◽  
Scanning Tunneling Microscope ◽  
Ion Beam ◽  
High Energy ◽  
Scanning Tunneling ◽  
Tunneling Microscope

scholarly journals The design and the performance of an ultrahigh vacuum 3He fridge-based scanning tunneling microscope with a double deck sample stage for in-situ tip treatment

2019 ◽  
Vol 196 ◽  
pp. 180-185
Author(s):  
Syu-You Guan ◽  
Hsien-Shun Liao ◽  
Bo-Jing Juang ◽  
Shu-Cheng Chin ◽  
Tien-Ming Chuang ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Ultrahigh Vacuum ◽  
Scanning Tunneling ◽  
Tunneling Microscope

Focusing of the ion beam from a scanning tunneling microscope tip

1992 ◽  
Vol 71 (2) ◽  
pp. 946-949 ◽  
Author(s):  
L. E. Bar’yudin ◽  
V. L. Bulatov ◽  
D. A. Telnov
Keyword(s):  
Scanning Tunneling Microscope ◽  
Ion Beam ◽  
Scanning Tunneling ◽  
Tunneling Microscope

ELECTRICAL CONDUCTION THROUGH SURFACE SUPERSTRUCTURES MEASURED BY MICROSCOPIC FOUR-POINT PROBES

2003 ◽  
Vol 10 (06) ◽  
pp. 963-980 ◽  
Author(s):  
SHUJI HASEGAWA ◽  
ICHIRO SHIRAKI ◽  
FUHITO TANABE ◽  
REI HOBARA ◽  
TAIZO KANAGAWA ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Conductivity Measurements ◽  
Crystal Surfaces ◽  
Tunneling Microscope ◽  
Silicon Chips ◽  
Surface Sensitivity ◽  
Scanning Electron ◽  
Probe Spacing

For in-situ measurements of the local electrical conductivity of well-defined crystal surfaces in ultrahigh vacuum, we have developed two kinds of microscopic four-point probe methods. One involves a "four-tip STM prober," in which four independently driven tips of a scanning tunneling microscope (STM) are used for measurements of four-point probe conductivity. The probe spacing can be changed from 500 nm to 1 mm. The other method involves monolithic micro-four-point probes, fabricated on silicon chips, whose probe spacing is fixed around several μm. These probes are installed in scanning-electron-microscopy/electron-diffraction chambers, in which the structures of sample surfaces and probe positions are observed in situ. The probes can be positioned precisely on aimed areas on the sample with the aid of piezoactuators. By the use of these machines, the surface sensitivity in conductivity measurements has been greatly enhanced compared with the macroscopic four-point probe method. Then the conduction through the topmost atomic layers (surface-state conductivity) and the influence of atomic steps on conductivity can be directly measured.

Direct Observation of X-ray Induced Atomic Motion Using Scanning Tunneling Microscope Combined with Synchrotron Radiation

2011 ◽  
Vol 11 (4) ◽  
pp. 2873-2881 ◽  
Author(s):  
Akira Saito ◽  
Takehiro Tanaka ◽  
Yasumasa Takagi ◽  
Hiromasa Hosokawa ◽  
Hiroshi Notsu ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Direct Observation ◽  
Scanning Tunneling Microscope ◽  
Atomic Motion ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
X Ray

Compact low temperature scanning tunneling microscope with in-situ sample preparation capability

2015 ◽  
Vol 86 (9) ◽  
pp. 093707 ◽  
Author(s):  
Jungdae Kim ◽  
Hyoungdo Nam ◽  
Shengyong Qin ◽  
Sang-ui Kim ◽  
Allan Schroeder ◽  
...  
Keyword(s):  
Low Temperature ◽  
Sample Preparation ◽  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Temperature Scanning
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