scholarly journals In Situ Microfabrication and Measurements of Bi2Se3 Ultrathin Films in a Multichamber System with a Focused Ion Beam, Molecular Beam Epitaxy, and Four-Tip Scanning Tunneling Microscope

2014 ◽  
Vol 12 (0) ◽  
pp. 423-430 ◽  
Author(s):  
Naoya Fukui ◽  
Rei Hobara ◽  
Toru Hirahara ◽  
Shuji Hasegawa ◽  
Yutaka Miyatake ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ultrathin Films ◽  
Scanning Tunneling Microscope ◽  
Molecular Beam ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Scanning Tunneling ◽  
Tunneling Microscope

Growth and Decay of Germanium Islands on Silicon Studied by High Temperature Stm

1999 ◽  
Vol 583 ◽  
Author(s):  
M. Kästner ◽  
B. Voigtländer
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Scanning Tunneling Microscope ◽  
Strain Energy ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Tunneling Microscope

AbstractWe use a scanning tunneling microscope (STM) capable of imaging the growing layer at high temperature during molecular beam epitaxy (MBE) to study the epitaxial growth of Germanium on Silicon and the decay of Ge islands. The periodicity of the (2×N) reconstruction of two-dimensional Ge layers on Si(001) is measured as function of the Ge coverage. Strain energy drives the formation of the (2×N) reconstruction and Si/Ge intermixing. A comparison to total energy calculations predicting the periodicity of the (2×N) reconstruction is used to estimate the amount of Si-Ge intermixing near the surface. The evolution of the size and shape of individual “hut clusters” is measured and explained by kinetically self-limiting growth. The relaxation of kinetically a determined morphology towards equilibrium is followed for a Ge layer on Si(111). Strained two-dimensional as well as partially relaxed three-dimensional islands dissolve and are soaked up by larger three-dimensional islands which are dislocated and therefore fully relaxed.

Scanning Tunneling Microscope Study of (001)InP Surface Prepared by Gas Source Molecular Beam Epitaxy

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 1267-1272 ◽  
Author(s):  
Bing Xiong Yang ◽  
Yasuhiko Ishikawa ◽  
Tsuyoshi Ozeki ◽  
Hideki Hasegawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscope ◽  
Microscope Study ◽  
Molecular Beam ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Gas Source ◽  
Inp Surface
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