Cross-sectional scanning tunneling microscopy characterization of molecular beam epitaxy grown InAs/GaSb/AlSb heterostructures for mid-infrared interband cascade lasers

1998 ◽  
Vol 16 (3) ◽  
pp. 1389 ◽  
Author(s):  
J. Harper
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional ◽  
Mid Infrared ◽  
Interband Cascade Lasers ◽  
Microscopy Characterization ◽  
Cascade Lasers

Cross-Sectional Scanning Tunneling Microscopy of III-V Heterostructures Grown by Molecular-Beam Epitaxy

1994 ◽  
Vol 340 ◽  
Author(s):  
A.Y. Lew ◽  
E.T. Yu ◽  
D.H. Chow ◽  
R.H. Miles
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Constant Current ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Close Inspection ◽  
Cross Sectional ◽  
Current Voltage ◽  
Strained Layer Superlattices

ABSTRACTCross-sectional scanning tunneling microscopy and spectroscopy have been used to characterize InAs/Ga1-x InxSb strained-layer superlattices grown by molecular-beam epitaxy. Atomic-resolution constant-current images of the epitaxial layers reveal monolayer roughness at the superlattice interfaces. An asymmetry in electronic structure between interfaces in which InAs has been grown on Ga1-x InxSb and those in which Ga1-x InxSb has been grown on InAs has also been observed in these images. Close inspection of the images reveals increased growthdirection lattice spacings in the Ga1-x InxSb layers compared to the InAs layers, as well as even larger lattice spacings at the InAs/Ga1-x InxSb interfaces. The latter is consistent with the formation of primarily InSb-like interfaces. Current-voltage spectra obtained while tunneling into the superlattice layers are found to be strongly influenced by extended superlattice electronic states.

scholarly journals Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 858-863
Author(s):  
Huajie Chen ◽  
A. R. Smith ◽  
R. M. Feenstra ◽  
D. W. Greve ◽  
J. E. Northrup
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Growth Parameters ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Group V ◽  
Group Iii ◽  
Ingan Alloys

InGaN alloys with indium compositions ranging from 0–40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

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