Process effects in shallow junction formation by plasma doping

1998 ◽  
Vol 16 (1) ◽  
pp. 435 ◽  
Author(s):  
R. J. Matyi
Keyword(s):  
Shallow Junction ◽  
Plasma Doping ◽  
Junction Formation ◽  
Process Effects

Hydrogen Etching Effects During Plasma Doping Processes and Impact on Shallow Junction Formation

1995 ◽  
Vol 396 ◽  
Author(s):  
Shu Qin ◽  
James D. Bernstein ◽  
Chung Chan
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Impurity Profile ◽  
Device Structure ◽  
Hydrogen Etching ◽  
Shallow Junction ◽  
Dopant Profile ◽  
Plasma Doping ◽  
Junction Formation ◽  
Hydrogen Radicals

AbstractHydrogen etching effects in plasma ion implantation (PII) doping processes alter device structure and implant dopant profile and reduce the retained implant dose. This has particular relevance to the shallow junction devices of ultra large scale integrated circuits (ULSI). Hydrogen etching of semiconductor materials including Si, poly-Si, SiO2, Al, and photoresist films have been investigated. The effects of varying different PII process parameters are presented. The experimental data show that the spontaneous etching by hydrogen radicals enhanced by ion bombardment is responsible for the etching phenomena. A computer simulation is used to predict the as-implanted impurity profile and the retained implant dose for a shallow junction doping when the etching effect is considered.

Ultra Shallow Junction Formation Using Plasma Doping and Laser Annealing for Sub-65 nm Technology Nodes

2006 ◽  
Vol 45 (4B) ◽  
pp. 2961-2964 ◽  
Author(s):  
Guk-Hyon Yon ◽  
Gyoung Ho Buh ◽  
Tai-su Park ◽  
Soo-Jin Hong ◽  
Yu Gyun Shin ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Shallow Junction ◽  
Plasma Doping ◽  
Junction Formation ◽  
Technology Nodes

Ultra Shallow Junction Formation Using Plasma Doping and Laser Annealing for Sub-65 nm Technology Nodes

2005 ◽  
Author(s):  
Guk-Hyon Yon ◽  
Soo-Jin Hong ◽  
Gyoung Ho Buh ◽  
Tai-su Park ◽  
Yu Gyun Shin ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Shallow Junction ◽  
Plasma Doping ◽  
Junction Formation ◽  
Technology Nodes

Ultra-Shallow Junction Formation by Plasma doping and Excimer Laser Annealing

2019 ◽  
Vol 19 (1) ◽  
pp. 87-94 ◽  
Author(s):  
Lak-Myung Jung ◽  
Seung-Woo Do ◽  
Jae-Min Kim ◽  
Seong Ho Kong ◽  
Ki-Hong Nam ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shallow Junction ◽  
Plasma Doping ◽  
Junction Formation

Ultra-shallow Junction Formation Using Plasma Doping and ExcimerLaser Annealing for Nano-technology CMOS Applications

2009 ◽  
Vol 55 (3(1)) ◽  
pp. 1065-1069 ◽  
Author(s):  
Seung-Woo Do ◽  
SeongHo Kong ◽  
Yong-Hyun Lee ◽  
Jae-Geun Oh ◽  
Jin-Ku Lee ◽  
...  
Keyword(s):  
Nano Technology ◽  
Shallow Junction ◽  
Plasma Doping ◽  
Junction Formation
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