Plasma Doping and Subsequent Rapid Thermal Processing for Ultra Shallow Junction Formation

2006 ◽  
Author(s):  
B. Mizuno ◽  
Y. Sasaki ◽  
Cheun-Guo Jin ◽  
H. Tamura ◽  
K. Okashita ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Shallow Junction ◽  
Plasma Doping ◽  
Junction Formation

Low temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing

1997 ◽  
Vol 70 (13) ◽  
pp. 1700-1702 ◽  
Author(s):  
R. Singh ◽  
K. C. Cherukuri ◽  
L. Vedula ◽  
A. Rohatgi ◽  
S. Narayanan
Keyword(s):  
Low Temperature ◽  
Thermal Processing ◽  
Vacuum Ultraviolet ◽  
Rapid Thermal Processing ◽  
Shallow Junction ◽  
Junction Formation ◽  
Ultraviolet Photons

Rapid Thermal Processing and The Quest for Ultra Shallow Boron Junctions

1986 ◽  
Vol 71 ◽  
Author(s):  
Tom Sedgwick
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Attractive Potential ◽  
High Activation ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Diffusion Effects ◽  
Junction Formation ◽  
Short Time

AbstractRapid Thermal Processing (RTP) can minimize processing time and therefore minimize dopant motion during annealing of ion implanted junctions. In spite of the advantage of short time annealing using RTP, the formation of shallow B junctions is thwarted by channeling, transient enhanced diffusion and concentration enhanced diffusion effects all of which lead to deeper B profiles. Channeling and transient enhanced diffusion can be avoided by preamorphizing the silicon before the B implant. However, defects at the original amorphous/crystal boundary persist after annealing. Very low energy B implantation can lead to very shallow dopant profiles and in spite of channeling effects, offers an attractive potential shallow junction technology. In all of the shallow junction formation techniques RTP is required to achieve both high activation of the implanted species and minimal diffusion of the implanted dopant.

Millisecond Microwave Annealing: Reaching the 32 Nm Node

2004 ◽  
Vol 810 ◽  
Author(s):  
Keith Thompson ◽  
John H. Booske ◽  
R.L. Ives ◽  
John Lohr ◽  
Yurii A. Gorelov ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Thermal Treatments ◽  
Next Generation ◽  
Shallow Junction ◽  
Microwave Annealing ◽  
Microwave Reactor ◽  
Junction Formation ◽  
Processing Techniques

ABSTRACTThe next generation of Si devices requires thermal treatments of 1200°C – 1300°C but can only withstand temperatures above 800°C for a few milliseconds. Current rapid thermal processing techniques cannot meet these requirements. We have designed, constructed, and tested a microwave reactor that heats Si to 1300°C in only a few milliseconds and cools the wafer at a rate that exceeds a million degrees per second. Applying millisecond microwave annealing to ultra-shallow junction formation in advanced Si devices shows that this technique meets or exceeds the thermal processing requirements for the next several generations of Si devices.

Hydrogen Etching Effects During Plasma Doping Processes and Impact on Shallow Junction Formation

1995 ◽  
Vol 396 ◽  
Author(s):  
Shu Qin ◽  
James D. Bernstein ◽  
Chung Chan
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Impurity Profile ◽  
Device Structure ◽  
Hydrogen Etching ◽  
Shallow Junction ◽  
Dopant Profile ◽  
Plasma Doping ◽  
Junction Formation ◽  
Hydrogen Radicals

AbstractHydrogen etching effects in plasma ion implantation (PII) doping processes alter device structure and implant dopant profile and reduce the retained implant dose. This has particular relevance to the shallow junction devices of ultra large scale integrated circuits (ULSI). Hydrogen etching of semiconductor materials including Si, poly-Si, SiO2, Al, and photoresist films have been investigated. The effects of varying different PII process parameters are presented. The experimental data show that the spontaneous etching by hydrogen radicals enhanced by ion bombardment is responsible for the etching phenomena. A computer simulation is used to predict the as-implanted impurity profile and the retained implant dose for a shallow junction doping when the etching effect is considered.

Junction Formation in Silicon Using a Phosphorus Vapor Source and Rapid Thermal Drive-In

1992 ◽  
Vol 260 ◽  
Author(s):  
Eric R. White ◽  
S. Ashok ◽  
D. L. Allara
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Metal Contacts ◽  
Red Phosphorus ◽  
Vapor Source ◽  
Junction Formation ◽  
Dopant Atoms ◽  
Cv Measurements ◽  
P Type ◽  
Vapor Treatment

ABSTRACTn+-n and n+-p junctions were formed on n-type and p-type Si using a thin film of phosphorus obtained from a simple vapor source, and driving in the dopant atoms in a rapid thermal processing (RTP) system. The vapor treatment consisted of heating powdered red phosphorus in a nitrogen ambient and allowing the resulting phosphorus vapor to deposit on the Si samples. This was done in an inexpensive apparatus constructed from flasks and test tubes. Following the vapor treatment, an SiOxfilm was sputtered over the phosphorus coating in order to serve as a capping layer during subsequent RTP drive-in that forms the junction. The junction properties were characterized by spreading resistance and electrical (IV and CV) measurements after deposition of metal contacts layers.

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