0.1 μm WSiN-gate fabrication of GaAs metal-semiconductor field effect transistors using electron cyclotron resonance ion stream etching with SF[sub 6]–CF[sub 4]–SiF[sub 4]–O[sub 2]

1997 ◽  
Vol 15 (6) ◽  
pp. 2639 ◽  
Author(s):  
Yoshito Jin
Keyword(s):  
Cyclotron Resonance ◽  
Field Effect ◽  
Electron Cyclotron Resonance ◽  
Field Effect Transistors ◽  
Electron Cyclotron

Electronic Device Fabrication Using Electron Cyclotron Resonance Etching of Boron Doped Homoepitaxial Diamond Films

1992 ◽  
Vol 242 ◽  
Author(s):  
S.A. Grot ◽  
R.A. Ditizio ◽  
G.SH. Gildenblat ◽  
A.R. Badzian ◽  
S.J. Fonash
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electronic Device ◽  
Field Effect Transistors ◽  
Diamond Films ◽  
Device Fabrication ◽  
Electron Cyclotron ◽  
Boron Doped ◽  
Recessed Gate ◽  
Electronic Device Fabrication

ABSTRACTWe describe the applicability of oxygen based Electron Cyclotron Resonance (ECR) etching of diamond for the purpose of fabricating electronic test structures and recessed gate field effect transistors. Boron doped homoepitaxial diamond films grown in a microwave assisted CVD reactor were used for this study. Etch rates from 8 nm/min up to 0.5 μm/min. were achieved depending on etch parameters.

Anisotropic electron cyclotron resonance etching of tungsten films on GaAs

1994 ◽  
Vol 30 (1) ◽  
pp. 84-85 ◽  
Author(s):  
R.J. Shul ◽  
D.J. Rieger ◽  
C. Constantine ◽  
A.G. Baca ◽  
C. Barratt
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron
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