Electronic Device Fabrication Using Electron Cyclotron Resonance Etching of Boron Doped Homoepitaxial Diamond Films

ABSTRACTWe describe the applicability of oxygen based Electron Cyclotron Resonance (ECR) etching of diamond for the purpose of fabricating electronic test structures and recessed gate field effect transistors. Boron doped homoepitaxial diamond films grown in a microwave assisted CVD reactor were used for this study. Etch rates from 8 nm/min up to 0.5 μm/min. were achieved depending on etch parameters.