Design and implementation of a real-time hierarchical parallel postprocessor for 100 keV electron beam lithography

Author(s):  
Lawrence P. Muray
2020 ◽  
Vol 32 (9) ◽  
pp. 095302
Author(s):  
Yugu Yang-Keathley ◽  
Stephen A Maloney ◽  
J Todd Hastings

Author(s):  
L. D. Jackel

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.


2020 ◽  
Vol 59 (12) ◽  
pp. 126502
Author(s):  
Moataz Eissa ◽  
Takuya Mitarai ◽  
Tomohiro Amemiya ◽  
Yasuyuki Miyamoto ◽  
Nobuhiko Nishiyama

2011 ◽  
Vol 30 (4) ◽  
pp. 945-948
Author(s):  
Shao-hua Liu ◽  
Zhi-hui Xiong ◽  
Wei-dong Bao ◽  
Mao-jun Zhang

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