Low temperature reactive ion etching of silicon with SF[sub 6]/O[sub 2] plasmas

1997 ◽  
Vol 15 (2) ◽  
pp. 434 ◽  
Author(s):  
T. Wells
Keyword(s):  
Low Temperature ◽  
Reactive Ion Etching ◽  
Ion Etching

Comparisons of Gallium Nitride and Indium Nitride Properties after CF4 / Argon Reactive Ion Etching

2002 ◽  
Vol 743 ◽  
Author(s):  
Marie Wintrebert-Fouquet ◽  
K. Scott ◽  
A. Butcher ◽  
Simon K H Lam
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Indium Nitride ◽  
Reactive Ion Etching ◽  
Film Surface ◽  
Chemical Vapor ◽  
Electrical Characteristics ◽  
Ion Etching ◽  
Before And After

ABSTRACTWe present a comparative study of the effects of low power reactive ion etching (RIE) on GaN and InN. This new, highly chemical, dry etching, using CF4 and Ar, has been developed for thin nitride films grown at low temperature in our laboratories. GaN films were grown by remote plasma enhanced-laser induced chemical vapor deposition and InN films were grown by radio-frequency RF reactive sputtering. Commercial GaN samples were also examined. Optical and electrical characteristics of the films are reported before and after removing 100 to 200 nm of the film surface by RIE. We have previously shown that the GaN films, although polycrystalline after growth, may be re-crystallized below the growth temperature. Removal of the surface oxide has been found to be imperative since a polycrystalline residue remains on the surface after re-crystallization.

Low-Temperature Dry Etching of GaAs and AlGaAs Using 92-MHz Anode-Coupled Chlorine Reactive Ion Etching

1997 ◽  
Vol 36 (Part 1, No. 12B) ◽  
pp. 7650-7654 ◽  
Author(s):  
Tadashi Saitoh ◽  
Tetsuomi Sogawa ◽  
Hiroshi Kanbe
Keyword(s):  
Low Temperature ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Ion Etching

Low‐temperature reactive ion etching and microwave plasma etching of silicon

1988 ◽  
Vol 52 (8) ◽  
pp. 616-618 ◽  
Author(s):  
Shinichi Tachi ◽  
Kazunori Tsujimoto ◽  
Sadayuki Okudaira
Keyword(s):  
Low Temperature ◽  
Plasma Etching ◽  
Microwave Plasma ◽  
Reactive Ion Etching ◽  
Ion Etching

Quasi-pyramidal texturing using phase-segregated masks

2011 ◽  
Vol 1288 ◽  
Author(s):  
Katherine L. Saenger ◽  
Roy Carruthers ◽  
Keith E. Fogel ◽  
Daniel Inns
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Barrier Layer ◽  
Alloy Composition ◽  
Reactive Ion Etching ◽  
Surface Texturing ◽  
Silicon Solar Cells ◽  
Ion Etching ◽  
Annealing Conditions ◽  
Thin Barrier

ABSTRACTSurface texturing processes for thin silicon solar cells ideally remove as little Si as possible relative to amount of topography generated. Here we describe how a micron-scale quasi-pyramidal texture may be achieved in Si layers with arbitrary crystallinity using a phase-segregated mask in combination with reactive ion etching (RIE). The Si to be textured is coated with a thin barrier layer followed by a layer of Al-Si alloy which phase-segregates into micron-sized regions of Al and Si after low temperature (<450 °C) annealing. One omponent of the mask is selectively etched away and the Si under the exposed barrier regions is etched by a process that gives the desired depth and lateral undercut. In this paper we show the dependence of the segregated Al-Si morphology on Al-Si alloy composition, thickness, and annealing conditions, and then present examples of texturing produced in single crystal Si by these masks in combination with CF4/O2 reactive ion etching.

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