Role of rate window, transient time, and reverse bias field on the deep levels of LT-GaAs by field effect transient spectroscopy

1997 ◽  
Vol 15 (6) ◽  
pp. 2057 ◽  
Author(s):  
N. C. Halder
Keyword(s):  
Field Effect ◽  
Reverse Bias ◽  
Bias Field ◽  
Deep Levels ◽  
Transient Time ◽  
Transient Spectroscopy ◽  
Rate Window ◽  
Lt Gaas

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

scholarly journals Influence of the Electrolyte Salt Concentration on DNA Detection with Graphene Transistors

Biosensors ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 24
Author(s):  
Agnes Purwidyantri ◽  
Telma Domingues ◽  
Jérôme Borme ◽  
Joana Rafaela Guerreiro ◽  
Andrey Ipatov ◽  
...  
Keyword(s):  
Phosphate Buffer ◽  
Species Interactions ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Limit Of Detection ◽  
Debye Length ◽  
Intermolecular Forces ◽  
Single Layer Graphene ◽  
Dna Adsorption

Liquid-gated Graphene Field-Effect Transistors (GFET) are ultrasensitive bio-detection platforms carrying out the graphene’s exceptional intrinsic functionalities. Buffer and dilution factor are prevalent strategies towards the optimum performance of the GFETs. However, beyond the Debye length (λD), the role of the graphene-electrolytes’ ionic species interactions on the DNA behavior at the nanoscale interface is complicated. We studied the characteristics of the GFETs under different ionic strength, pH, and electrolyte type, e.g., phosphate buffer (PB), and phosphate buffer saline (PBS), in an automatic portable built-in system. The electrostatic gating and charge transfer phenomena were inferred from the field-effect measurements of the Dirac point position in single-layer graphene (SLG) transistors transfer curves. Results denote that λD is not the main factor governing the effective nanoscale screening environment. We observed that the longer λD was not the determining characteristic for sensitivity increment and limit of detection (LoD) as demonstrated by different types and ionic strengths of measuring buffers. In the DNA hybridization study, our findings show the role of the additional salts present in PBS, as compared to PB, in increasing graphene electron mobility, electrostatic shielding, intermolecular forces and DNA adsorption kinetics leading to an improved sensitivity.

Elucidating the Role of Water‐Related Traps in the Operation of Polymer Field‐Effect Transistors

2021 ◽  
pp. 2100393
Author(s):  
Hamna F. Iqbal ◽  
Matthew Waldrip ◽  
Hu Chen ◽  
Iain McCulloch ◽  
Oana D. Jurchescu
Keyword(s):  
Field Effect ◽  
Field Effect Transistors

Evidence For Non-Correlation Between The 0.15 eV And 0.44 eV Cu-Related Acceptor Levels In GaAs

1996 ◽  
Vol 442 ◽  
Author(s):  
K. Leosson ◽  
H. P. Gislason
Keyword(s):  
Reverse Bias ◽  
Deep Level ◽  
Current Transient ◽  
Zero Bias ◽  
Lithium Diffusion ◽  
Transient Spectroscopy ◽  
Plasma Hydrogenation

AbstractWe present investigations on the two dominating acceptor levels observed in Cu-diffused GaAs which have frequently been attributed to the two ionization levels of a double CuGa acceptor. We employed plasma hydrogenation and lithium diffusion followed by reverse-bias and zero-bias annealing to passivate and subsequently reactivate the Cu-related acceptor levels. Deep-level current-transient spectroscopy measurements reveal that the two levels are independently reactivated, strongly indicating that they arise from different defects.

The Maxwell-Wagner model for charge transport in ambipolar organic field-effect transistors: The role of zero-potential position

2012 ◽  
Vol 101 (24) ◽  
pp. 243302 ◽  
Author(s):  
Yasuhiro Mashiko ◽  
Dai Taguchi ◽  
Martin Weis ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Wagner Model ◽  
Zero Potential

The Role of Weak Molecular Dopants in Enhancing the Performance of Solution-Processed Organic Field-Effect Transistors

2018 ◽  
Vol 5 (2) ◽  
pp. 1800547 ◽  
Author(s):  
Zongrui Wang ◽  
Ye Zou ◽  
Wangqiao Chen ◽  
Yinjuan Huang ◽  
Changjiang Yao ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processed
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