Characterization and application of a low-profile metal–semiconductor–metal detector for low energy backscattered electrons

1996 ◽  
Vol 14 (6) ◽  
pp. 3821 ◽  
Author(s):  
G. D. Meier
Keyword(s):  
Low Energy ◽  
Metal Detector ◽  
Backscattered Electrons ◽  
Low Profile ◽  
Metal Semiconductor Metal

Field distribution and collection efficiency in an AlGaN metal–semiconductor–metal detector

2002 ◽  
Vol 91 (9) ◽  
pp. 6095-6098 ◽  
Author(s):  
L. Hirsch ◽  
P. Moretto ◽  
J. Y. Duboz ◽  
J. L. Reverchon ◽  
B. Damilano ◽  
...  
Keyword(s):  
Field Distribution ◽  
Collection Efficiency ◽  
Metal Detector ◽  
Metal Semiconductor Metal

scholarly journals Multi-Channel Detection of the Angular Distribution of Backscattered Electrons in the Scanning Low Energy Electron Microscope

2006 ◽  
Vol 12 (S02) ◽  
pp. 1438-1439 ◽  
Author(s):  
I Mullerova ◽  
I Konvalina
Keyword(s):  
Angular Distribution ◽  
Electron Microscope ◽  
Low Energy ◽  
Energy Electron ◽  
Channel Detection ◽  
Backscattered Electrons ◽  
Low Energy Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006

Gas effect on the emission and detection of the backscattered electrons in a VP-SEM at low energy

2018 ◽  
Vol 184 ◽  
pp. 17-23 ◽  
Author(s):  
Z. Hafsi ◽  
O. Mansour ◽  
A. Kadoun ◽  
L. Khouchaf ◽  
C. Mathieu
Keyword(s):  
Low Energy ◽  
Backscattered Electrons ◽  
Gas Effect

scholarly journals Silver Nanoparticles in Porous Germanium

2019 ◽  
Vol 3 (3) ◽  
Keyword(s):  
Ion Implantation ◽  
Ag Nanoparticles ◽  
Average Diameter ◽  
Size Distribution Function ◽  
Thin Layers ◽  
Low Energy ◽  
High Dose ◽  
Near Surface ◽  
Backscattered Electrons ◽  
20 Nm

Recent experiments on fabrication of nanoporous Si and Ge layers with Ag nanoparticles by low-energy high-dose ion implantation are discussed. Ag+-ion implantation of single-crystal c-Si and c-Ge at low-energy (E = 30 keV) highdoses (D = 1.25·1015 - 1.5·1017 ion/cm2 ) and current density (J = 2-15 μA/cm2 ) was carried out for this purpose. The changes of Si and Ge surface morphology after ion implantation were studied by scanning electron and atom-force microscopy. The near surface area of samples was also analyzed by diffraction of the backscattered electrons and energydispersive X-ray microanalysis. Amorphization of near-surface layer was observed at the lowest implantation doses of c-Si. Ag nanoparticles were synthesized and uniformly distributed over the near Si surface when the threshold dose of 3.1·1015 ion/cm2 exceeded. At a dose of more than 1017 ion/cm2 , the formation of a surface nanoporous PSi structure was detected. Ag nanoparticle size distribution function became bimodal and the largest particles were localized along Si-pore walls. In the case of Ge substrates, as a result of the implantation on the c-Ge surface, a porous amorphous PGe layer of a spongy structure was formed consisting of a network of intersecting Ge nanowires with an average diameter of ~ 10-20 nm. At the ends of the nanowires, the synthesis of Ag nanoparticles was observed. It was found that the formation of pores during Ag+-ion implantation was accompanied by efficient spattering of the Si and Ge surface. Thus, ion implantation is suggested to be used for the formation of nanoporous semiconductor thin layers for industry, which could be easily combined with the crystalline matrix for various applications.

A metal–semiconductor–metal detector based on ZnO nanowires grown on a graphene layer

2014 ◽  
Vol 25 (5) ◽  
pp. 055501 ◽  
Author(s):  
Qiang Xu ◽  
Qijin Cheng ◽  
Jinxiang Zhong ◽  
Weiwei Cai ◽  
Zifeng Zhang ◽  
...  
Keyword(s):  
Graphene Layer ◽  
Zno Nanowires ◽  
Metal Detector ◽  
Metal Semiconductor Metal
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