A trochoidal spectrometer for the analysis of low‐energy inelastically backscattered electrons

1989 ◽  
Vol 60 (6) ◽  
pp. 1054-1060 ◽  
Author(s):  
P. Cloutier ◽  
L. Sanche
Keyword(s):  
Low Energy ◽  
Backscattered Electrons

scholarly journals Multi-Channel Detection of the Angular Distribution of Backscattered Electrons in the Scanning Low Energy Electron Microscope

2006 ◽  
Vol 12 (S02) ◽  
pp. 1438-1439 ◽  
Author(s):  
I Mullerova ◽  
I Konvalina
Keyword(s):  
Angular Distribution ◽  
Electron Microscope ◽  
Low Energy ◽  
Energy Electron ◽  
Channel Detection ◽  
Backscattered Electrons ◽  
Low Energy Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006

Gas effect on the emission and detection of the backscattered electrons in a VP-SEM at low energy

2018 ◽  
Vol 184 ◽  
pp. 17-23 ◽  
Author(s):  
Z. Hafsi ◽  
O. Mansour ◽  
A. Kadoun ◽  
L. Khouchaf ◽  
C. Mathieu
Keyword(s):  
Low Energy ◽  
Backscattered Electrons ◽  
Gas Effect

scholarly journals Silver Nanoparticles in Porous Germanium

2019 ◽  
Vol 3 (3) ◽  
Keyword(s):  
Ion Implantation ◽  
Ag Nanoparticles ◽  
Average Diameter ◽  
Size Distribution Function ◽  
Thin Layers ◽  
Low Energy ◽  
High Dose ◽  
Near Surface ◽  
Backscattered Electrons ◽  
20 Nm

Recent experiments on fabrication of nanoporous Si and Ge layers with Ag nanoparticles by low-energy high-dose ion implantation are discussed. Ag+-ion implantation of single-crystal c-Si and c-Ge at low-energy (E = 30 keV) highdoses (D = 1.25·1015 - 1.5·1017 ion/cm2 ) and current density (J = 2-15 μA/cm2 ) was carried out for this purpose. The changes of Si and Ge surface morphology after ion implantation were studied by scanning electron and atom-force microscopy. The near surface area of samples was also analyzed by diffraction of the backscattered electrons and energydispersive X-ray microanalysis. Amorphization of near-surface layer was observed at the lowest implantation doses of c-Si. Ag nanoparticles were synthesized and uniformly distributed over the near Si surface when the threshold dose of 3.1·1015 ion/cm2 exceeded. At a dose of more than 1017 ion/cm2 , the formation of a surface nanoporous PSi structure was detected. Ag nanoparticle size distribution function became bimodal and the largest particles were localized along Si-pore walls. In the case of Ge substrates, as a result of the implantation on the c-Ge surface, a porous amorphous PGe layer of a spongy structure was formed consisting of a network of intersecting Ge nanowires with an average diameter of ~ 10-20 nm. At the ends of the nanowires, the synthesis of Ag nanoparticles was observed. It was found that the formation of pores during Ag+-ion implantation was accompanied by efficient spattering of the Si and Ge surface. Thus, ion implantation is suggested to be used for the formation of nanoporous semiconductor thin layers for industry, which could be easily combined with the crystalline matrix for various applications.

Current State of Biological High-Resolution Scanning Electron Microscopy

1988 ◽  
Vol 46 ◽  
pp. 180-181 ◽  
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Backscattered Electrons ◽  
Lens Position ◽  
Low Voltage Operation ◽  
Signal Collection ◽  
Probe Size ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

A new generation of high performance field emission scanning electron microscopes (FSEM) is now commercially available (JEOL 890, Hitachi S 900, ISI OS 130-F) characterized by an "in lens" position of the specimen where probe diameters are reduced and signal collection improved. Additionally, low voltage operation is extended to 1 kV. Compared to the first generation of FSEM (JE0L JSM 30, Hitachi S 800), which utilized a specimen position below the final lens, specimen size had to be reduced but useful magnification could be impressively increased in both low (1-4 kV) and high (5-40 kV) voltage operation, i.e. from 50,000 to 200,000 and 250,000 to 1,000,000 x respectively.At high accelerating voltage and magnification, contrasts on biological specimens are well characterized1 and are produced by the entering probe electrons in the outmost surface layer within -vl nm depth. Backscattered electrons produce only a background signal. Under these conditions (FIG. 1) image quality is similar to conventional TEM (FIG. 2) and only limited at magnifications >1,000,000 x by probe size (0.5 nm) or non-localization effects (%0.5 nm).

Development of a digital SEM

1991 ◽  
Vol 49 ◽  
pp. 358-359
Author(s):  
A. Yamada ◽  
A. Shibano ◽  
K. Harasawa ◽  
T. Kobayashi ◽  
H. Fukuda ◽  
...  
Keyword(s):  
Large Diameter ◽  
Objective Lens ◽  
Large Specimen ◽  
Backscattered Electrons ◽  
Digital Scanning ◽  
Junction Type ◽  
High Resolution Images ◽  
Working Distance ◽  
Type Detector ◽  
Short Working

A newly developed digital scanning electron microscope, the JSM-6300, has the following features: Equipped with a narrower conical objective lens (OL), it allows high resolution images to be obtained easily at a short working distance (WD) and a large specimen tilt angle. In addition, it is provided with automatic functions and digital image processing functions for ease of operation.Conical C-F lens: The newly developed conical C-F objective lens, having low aberration characteristics over a wide WD range, allows a large-diameter (3-inch) specimen to be tilted up to 60° at short WD, and provides images with low magnifications starting at 10*. On the bottom of the lens, a p n junction type detector is provided to detect backscattered electrons (BE) from the specimen. As the narrower conical 0L increases the secondary electron (SE) detector's field intensity on the specimen surface, high SE image quality is obtained.

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