Profile control in dry development of high-aspect-ratio resist structures

1995 ◽  
Vol 13 (6) ◽  
pp. 3017 ◽  
Author(s):  
M. B. Stern
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Profile Control

scholarly journals Etch profile control of high-aspect ratio deep submicrometer α-Si gate etch

2001 ◽  
Vol 14 (3) ◽  
pp. 242-254 ◽  
Author(s):  
Hyun-Mog Park ◽  
D.S. Grimard ◽  
J.W. Grizzle ◽  
F.L. Terry
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Profile Control ◽  
Deep Submicrometer ◽  
Etch Profile

A Two-Step Spacer Etch for High-Aspect-Ratio Gate Stack Process

2000 ◽  
Vol 611 ◽  
Author(s):  
Chien Yu ◽  
Rich Wise ◽  
Anthony Domenicucci
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Gate Stack ◽  
Methyl Fluoride ◽  
Thermal Oxide ◽  
Profile Control ◽  
The Stability ◽  
Better Than

ABSTRACTA highly selective nitride etch was developed for gate stack spacer process in advanced memory programs. Based on methyl fluoride chemistry with better than 8:1 selectivity of nitride:oxide, this process exhibits minimal erosion to the underlying RTO thermal oxide for consistent diffusion ion-implant control. As the groundrule changed to 0.175um and below, a two-step etch scheme was employed to maintain the profile control in high-aspect-ratio structures. The stability and repeatability of the process is demonstrated in the SPC chart of the post etch FTA site measurement.

High Aspect Ratio Contact Profile Control and Cryogenic Etch Process

2021 ◽  
Author(s):  
Jie Luo ◽  
Jingheng Meng ◽  
Baodong Han ◽  
Hongbo Sun ◽  
Deyuan Xiao ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Profile Control
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