Profile control of high aspect ratio trenches of silicon. I. Effect of process parameters on local bowing

2002 ◽  
Vol 20 (4) ◽  
pp. 1508 ◽  
Author(s):  
M. Boufnichel ◽  
S. Aachboun ◽  
F. Grangeon ◽  
P. Lefaucheux ◽  
P. Ranson
Keyword(s):  
Aspect Ratio ◽  
Process Parameters ◽  
High Aspect Ratio ◽  
Profile Control

A multi-scale E-Jet 3D printing regulated by structured multi-physics field

2021 ◽  
Author(s):  
Kai Li ◽  
Yihui Zhao ◽  
Maiqi Liu ◽  
Xiaoying Wang ◽  
Fangyuan Zhang ◽  
...  
Keyword(s):  
Tissue Engineering ◽  
3D Printing ◽  
Aspect Ratio ◽  
Process Parameters ◽  
High Aspect Ratio ◽  
Thermal Field ◽  
Structural Features ◽  
Microfluidic Chips ◽  
Multi Scale ◽  
Fluid Field

Abstract Micro/nano scale structure as important functional part have been widely used in wearable flexible sensors, gas sensors, biological tissue engineering, microfluidic chips super capacitors and so on. Here a multi-scale electrohydrodynamic jet (E-Jet) 3D printing approach regulated by structured multi-physics fields was demonstrated to generate 800 nm scale 2D geometries and high aspect ratio 3D structures. The simulation model of jetting process under resultant effect of top fluid field, middle electric field and bottom thermal field was established. And the physical mechanism and scale law of jet formation were studied. The effects of thermal field temperature, applied voltage and flow rate on the jet behaviors were studied; and the range of process parameters of stable jet was obtained. The regulation of printing parameters was used to manufacture the high resolution gradient graphics and the high aspect ratio structure with tight interlayer bonding. The structural features could be flexibly adjusted by reasonably matching the process parameters. Finally, PCL/PVP composite scaffolds with cell-scale fiber and ordered fiber spacing were printed. The proposed E-Jet printing method provides an alternative approach for the application of biopolymer materials in tissue engineering.

SYNCHROTRON-RADIATION-SUPPORTED HIGH-ASPECT-RATIO NANOFABRICATION

COSMOS ◽  
2007 ◽  
Vol 03 (01) ◽  
pp. 79-88
Author(s):  
A. CHEN ◽  
G. LIU ◽  
L. K. JIAN ◽  
HERBERT O. MOSER
Keyword(s):  
Synchrotron Radiation ◽  
Aspect Ratio ◽  
Light Source ◽  
Process Parameters ◽  
High Aspect Ratio ◽  
Radiation Spectrum ◽  
Nanometer Scale ◽  
X Ray ◽  
Preliminary Results ◽  
Synchrotron Light

X-ray lithography with synchrotron radiation is an important nanolithographic tool which has unique advantages in the production of high aspect ratio nanostructures. The optimum synchrotron radiation spectrum for nanometer scale X-ray lithography is normally in the range of 500 eV to 2 keV. In this paper, we present the main methods, equipment, process parameters and preliminary results of nanofabrication by proximity X-ray lithography within the nanomanufacturing program pursued by Singapore Synchrotron Light Source (SSLS). Nanostructures with feature sizes down to 200 nm and an aspect ratio up to 10 have been successfully achieved by this approach.

scholarly journals Etch profile control of high-aspect ratio deep submicrometer α-Si gate etch

2001 ◽  
Vol 14 (3) ◽  
pp. 242-254 ◽  
Author(s):  
Hyun-Mog Park ◽  
D.S. Grimard ◽  
J.W. Grizzle ◽  
F.L. Terry
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Profile Control ◽  
Deep Submicrometer ◽  
Etch Profile

scholarly journals Effect of Process Parameters on Flow Length and Flash Formation in Injection Moulding of High Aspect Ratio Polymeric Micro Features

Micromachines ◽  
2018 ◽  
Vol 9 (2) ◽  
pp. 58 ◽  
Author(s):  
Abdelkhalik Eladl ◽  
Rania Mostafa ◽  
Aminul Islam ◽  
Dario Loaldi ◽  
Hassan Soltan ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Process Parameters ◽  
High Aspect Ratio ◽  
Injection Moulding ◽  
Flow Length ◽  
Micro Features

Post Titanium Silicide Processing

1995 ◽  
Vol 402 ◽  
Author(s):  
G. Grynkewich ◽  
V. Ilderem ◽  
M. Miller ◽  
S. Ramaswami
Keyword(s):  
Aspect Ratio ◽  
Contact Resistance ◽  
Process Parameters ◽  
High Aspect Ratio ◽  
Film Formation ◽  
Titanium Silicide ◽  
Fluorocarbon Polymer ◽  
Sidewall Angle ◽  
The Impact ◽  
Etch Profile

AbstractDecreasing contact dimensions coupled with the need for planarization to accommodate multiple layers of metal have created many challenges for the contact etch module. For example, contact etch processes are often required to stop on thin titanium silicide while at the same time forming high aspect ratio, straightwalled contacts. In this paper, the impact of various dielectric compositions and contact etch process parameters on etch profile, selectivity, and contact resistance is presented for the formation of high aspect ratio, submicron contacts to thin TiSi2 layers. The etch profile is formed by RIE using a mixture of CHF3 and various amounts of CF4. Surprisingly, the sidewall angle and selectivity to silicide showed little dependence on the percent CF4. Contact resistance measurements, however, varied greatly with percent CF4 and contact aspect ratio. The variation of contact resistance with etch chemistry was attributed to a variation in the extent of fluorocarbon polymer film formation, which in turn depends on the ratio of carbon to fluorine in the plasma. Finally, post contact etch treatments were examined for efficiency in removing the polymer films from the high aspect ratio contacts.

A Two-Step Spacer Etch for High-Aspect-Ratio Gate Stack Process

2000 ◽  
Vol 611 ◽  
Author(s):  
Chien Yu ◽  
Rich Wise ◽  
Anthony Domenicucci
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Gate Stack ◽  
Methyl Fluoride ◽  
Thermal Oxide ◽  
Profile Control ◽  
The Stability ◽  
Better Than

ABSTRACTA highly selective nitride etch was developed for gate stack spacer process in advanced memory programs. Based on methyl fluoride chemistry with better than 8:1 selectivity of nitride:oxide, this process exhibits minimal erosion to the underlying RTO thermal oxide for consistent diffusion ion-implant control. As the groundrule changed to 0.175um and below, a two-step etch scheme was employed to maintain the profile control in high-aspect-ratio structures. The stability and repeatability of the process is demonstrated in the SPC chart of the post etch FTA site measurement.

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