scholarly journals Etch profile control of high-aspect ratio deep submicrometer α-Si gate etch

2001 ◽  
Vol 14 (3) ◽  
pp. 242-254 ◽  
Author(s):  
Hyun-Mog Park ◽  
D.S. Grimard ◽  
J.W. Grizzle ◽  
F.L. Terry
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Profile Control ◽  
Deep Submicrometer ◽  
Etch Profile

Post Titanium Silicide Processing

1995 ◽  
Vol 402 ◽  
Author(s):  
G. Grynkewich ◽  
V. Ilderem ◽  
M. Miller ◽  
S. Ramaswami
Keyword(s):  
Aspect Ratio ◽  
Contact Resistance ◽  
Process Parameters ◽  
High Aspect Ratio ◽  
Film Formation ◽  
Titanium Silicide ◽  
Fluorocarbon Polymer ◽  
Sidewall Angle ◽  
The Impact ◽  
Etch Profile

AbstractDecreasing contact dimensions coupled with the need for planarization to accommodate multiple layers of metal have created many challenges for the contact etch module. For example, contact etch processes are often required to stop on thin titanium silicide while at the same time forming high aspect ratio, straightwalled contacts. In this paper, the impact of various dielectric compositions and contact etch process parameters on etch profile, selectivity, and contact resistance is presented for the formation of high aspect ratio, submicron contacts to thin TiSi2 layers. The etch profile is formed by RIE using a mixture of CHF3 and various amounts of CF4. Surprisingly, the sidewall angle and selectivity to silicide showed little dependence on the percent CF4. Contact resistance measurements, however, varied greatly with percent CF4 and contact aspect ratio. The variation of contact resistance with etch chemistry was attributed to a variation in the extent of fluorocarbon polymer film formation, which in turn depends on the ratio of carbon to fluorine in the plasma. Finally, post contact etch treatments were examined for efficiency in removing the polymer films from the high aspect ratio contacts.

A Two-Step Spacer Etch for High-Aspect-Ratio Gate Stack Process

2000 ◽  
Vol 611 ◽  
Author(s):  
Chien Yu ◽  
Rich Wise ◽  
Anthony Domenicucci
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Gate Stack ◽  
Methyl Fluoride ◽  
Thermal Oxide ◽  
Profile Control ◽  
The Stability ◽  
Better Than

ABSTRACTA highly selective nitride etch was developed for gate stack spacer process in advanced memory programs. Based on methyl fluoride chemistry with better than 8:1 selectivity of nitride:oxide, this process exhibits minimal erosion to the underlying RTO thermal oxide for consistent diffusion ion-implant control. As the groundrule changed to 0.175um and below, a two-step etch scheme was employed to maintain the profile control in high-aspect-ratio structures. The stability and repeatability of the process is demonstrated in the SPC chart of the post etch FTA site measurement.

High Aspect Ratio Contact Profile Control and Cryogenic Etch Process

2021 ◽  
Author(s):  
Jie Luo ◽  
Jingheng Meng ◽  
Baodong Han ◽  
Hongbo Sun ◽  
Deyuan Xiao ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Profile Control
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