Restricted motion of a GaAs surface Fermi level caused by excess As

1995 ◽  
Vol 13 (5) ◽  
pp. 2069 ◽  
Author(s):  
Yoshinori Wada
Keyword(s):  
Fermi Level ◽  
Gaas Surface ◽  
Surface Fermi Level

Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates

2008 ◽  
Vol 93 (4) ◽  
pp. 041913 ◽  
Author(s):  
Houssam Chouaib ◽  
Catherine Bru-Chevallier ◽  
Aleksandra Apostoluk ◽  
Wojciech Rudno-Rudzinski ◽  
Melania Lijadi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Fermi Level ◽  
Molecular Beam ◽  
Inp Substrates ◽  
Surface Fermi Level

scholarly journals Unified mechanism of the surface Fermi level pinning in III-As nanowires

2018 ◽  
Vol 29 (31) ◽  
pp. 314003 ◽  
Author(s):  
Prokhor A Alekseev ◽  
Mikhail S Dunaevskiy ◽  
George E Cirlin ◽  
Rodion R Reznik ◽  
Alexander N Smirnov ◽  
...  
Keyword(s):  
Fermi Level ◽  
Fermi Level Pinning ◽  
Surface Fermi Level

scholarly journals Photoellipsometry determination of surface Fermi level in GaAs (100)

1993 ◽  
Vol 11 (4) ◽  
pp. 1075-1082 ◽  
Author(s):  
Yi‐Ming Xiong ◽  
Paul G. Snyder ◽  
John A. Woollam
Keyword(s):  
Fermi Level ◽  
Surface Fermi Level

Passivation of InP-Based Heterostructure Bipolar Transistors in Relation to Surface Fermi Level

1999 ◽  
Vol 38 (Part 1, No. 2B) ◽  
pp. 1195-1199 ◽  
Author(s):  
Takeshi Kikawa ◽  
Shinichiro Takatani ◽  
Hiroshi Masuda ◽  
Tomonori Tanoue
Keyword(s):  
Fermi Level ◽  
Bipolar Transistors ◽  
Surface Fermi Level

Effect of InAs quantum dots on the Fermi level pinning of undoped-n+ type GaAs surface studied by contactless electroreflectance

2003 ◽  
Vol 93 (7) ◽  
pp. 4169-4172 ◽  
Author(s):  
Peng Jin ◽  
X. Q. Meng ◽  
Z. Y. Zhang ◽  
C. M. Li ◽  
B. Xu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Fermi Level ◽  
Gaas Surface ◽  
Inas Quantum Dots ◽  
Fermi Level Pinning

Studies of Surface State Densities of Semiconductors by Room-Temperature Photoreflectance

1999 ◽  
Vol 573 ◽  
Author(s):  
J. S. Hwan ◽  
G. S. Chang
Keyword(s):  
Fermi Level ◽  
Barrier Height ◽  
Surface State ◽  
Transport Theory ◽  
Thermionic Emission ◽  
State Density ◽  
Surface Barrier ◽  
Novel Approach ◽  
State Densities ◽  
Surface Fermi Level

ABSTRACTIn this study, we develop a novel approach to determine the surface Fermi level and the surface state densities of semiconductors. The built-in electric field and thus the surface barrier height are evaluated from the Franz-Keldysh oscillations in the PR spectra. Based on the thermionic-emission theory and current-transport theory, the surface state density as well as the pinning position of the surface Fermi level can be determined from the dependence of the surface barrier height on the pump beam intensity. Even though this method is significantly simpler, easier to perform, and time efficient compared with other approaches, the results obtained agree with the literature.

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