Ultrathin nitride layers grown by molecular-beam epitaxy and their effects on interface states in silicon metal–insulator–semiconductor field-effect transistors

1995 ◽  
Vol 13 (2) ◽  
pp. 786 ◽  
Author(s):  
R. T. Fayfield
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors ◽  
Interface States ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Nitride Layers

scholarly journals Влияние имплантации ионов As-=SUP=-+-=/SUP=- и последующего отжига на электрические свойства приповерхностных слоев варизонных пленок n-Hg-=SUB=-0.78-=/SUB=-Cd-=SUB=-0.22-=/SUB=-Te

2021 ◽  
Vol 47 (4) ◽  
pp. 33
Author(s):  
А.В. Войцеховский ◽  
С.Н. Несмелов ◽  
С.М. Дзядух ◽  
В.С. Варавин ◽  
С.А. Дворецкий ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Interface States ◽  
Surface Layers ◽  
Metal Insulator ◽  
Near Surface ◽  
Metal Insulator Semiconductor ◽  
Wide Gap ◽  
Mis Structures

Films of n-Hg0.775Cd0.225Te with near-surface wide-gap layers were grown by molecular beam epitaxy on Si (013) substrates. To measure the admittance, metal – insulator – semiconductor (MIS) structures were fabricated on the basis of the as-grown HgCdTe film, films after implantation, and films after implantation and annealing. Using techniques that take into account the presence of graded-gap layers and slow interface states, the main parameters of the near-surface layers of HgCdTe films have been determined after the technological procedures used to create photodiodes.

Near-UV Electroluminescence from a ZnCdSSe/ZnSSe Metal-Insulator- Semiconductor Diode on GaP Grown by Molecular Beam Epitaxy

1993 ◽  
Vol 32 (Part 2, No. 9A) ◽  
pp. L1200-L1202 ◽  
Author(s):  
Kunio Ichino ◽  
Toshikazu Onishi ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Semiconductor Diode ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

2010 ◽  
Vol 97 (25) ◽  
pp. 253502 ◽  
Author(s):  
Yuji Urabe ◽  
Masafumi Yokoyama ◽  
Hideki Takagi ◽  
Tetsuji Yasuda ◽  
Noriyuki Miyata ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

scholarly journals Determination of Interface-State Distributions in Polymer-Based Metal-Insulator-Semiconductor Capacitors by Impedance Spectroscopy

2018 ◽  
Vol 8 (9) ◽  
pp. 1493 ◽  
Author(s):  
Hideyuki Hatta ◽  
Yuhi Miyagawa ◽  
Takashi Nagase ◽  
Takashi Kobayashi ◽  
Takashi Hamada ◽  
...  
Keyword(s):  
Impedance Spectroscopy ◽  
Field Effect Transistors ◽  
Interface State ◽  
Interface States ◽  
Localized States ◽  
Electrical Performance ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Gate Insulators ◽  
Mis Capacitors

Information on localized states at the interfaces of solution-processed organic semiconductors and polymer gate insulators is critical to the development of printable organic field-effect transistors (OFETs) with good electrical performance. This paper reports on the use of impedance spectroscopy to determine the energy distribution of the density of interface states in organic metal-insulator-semiconductor (MIS) capacitors based on poly(3-hexylthiophene) (P3HT) with three different polymer gate insulators, including polyimide, poly(4-vinylphenol), and poly(methylsilsesquioxane). The findings of the study indicate that the impedance characteristics of the P3HT MIS capacitors are strongly affected by patterning and thermal annealing of the organic semiconductor films. To extract the interface-state distributions from the conductance of the P3HT MIS capacitors, an equivalent circuit model with continuum trap states is used, which also takes the band-bending fluctuations into consideration. In addition, the relationship between the determined interface states and the electrical characteristics of P3HT-based OFETs is investigated.

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

2019 ◽  
Vol 7 (29) ◽  
pp. 8855-8860 ◽  
Author(s):  
Janghyuk Kim ◽  
Marko J. Tadjer ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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