Cross-sectional characterization of thin-film transistors with transmission electron microscopy

1995 ◽  
Vol 13 (3) ◽  
pp. 1353 ◽  
Author(s):  
S. Tsuji
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thin Film Transistors ◽  
Cross Sectional ◽  
Transmission Electron

Characterization of Heterointerfaces in Thin-Film Transistors by Cross-Sectional Transmission Electron Microscopy

1996 ◽  
Vol 466 ◽  
Author(s):  
K. Kuroda ◽  
S. Tsuji ◽  
Y. Hayashi ◽  
H. Saka
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thin Film Transistors ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multilayered Structure ◽  
Silicon Thin Film ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTHydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) are now widely used as elements for active matrix liquid crystal displays. The nanometer-scale multilayered structure of a-Si:H TFTs has been characterized by cross-sectional transmission electron microscopy (TEM). The discrete layer construction of a faulty TFTs and the generation of defects during manufacturing processes have been investigated. A combination of focused ion beam (FIB) etching and cross-sectional TEM leads to a successful failure analysis. A contamination layer with a thickness of 10–30 nm and microvoids inside multilayers are identified in faulty TFTs. An a-Si layer on silicon nitride (SiNx) is crystallized during TEM observation. Electron energy loss spectroscopy analysis indicates that the diffusion of nitrogen into a-Si layer causes the crystallization.

Transmission electron microscopy of thin-film transistors on glass substrates

1998 ◽  
Vol 319 (1-2) ◽  
pp. 106-109 ◽  
Author(s):  
Katsuhiro Tsujimoto ◽  
Satoshi Tsuji ◽  
Kotaro Kuroda ◽  
Hiroyasu Saka
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thin Film Transistors ◽  
Glass Substrates ◽  
Transmission Electron
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