Cross-sectional transmission electron microscopy observations of structural damage in Al0.16Ga0.84N thin film under contact loading

2008 ◽  
Vol 103 (3) ◽  
pp. 033503 ◽  
Author(s):  
Sheng-Rui Jian ◽  
Jenh-Yih Juang ◽  
Yi-Shao Lai
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Damage ◽  
Cross Sectional ◽  
Contact Loading ◽  
Transmission Electron

Transmission electron microscopy study of YNi2B2C thin film growth on MgO(001)

2004 ◽  
Vol 19 (5) ◽  
pp. 1413-1416 ◽  
Author(s):  
G.H. Cao ◽  
P. Simon ◽  
W. Skrotzki
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Film Growth ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Orientation Relationships ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Mgo Substrate

A YNi2B2C thin film deposited on MgO(001) substrate by pulsed laser deposition has been investigated by transmission electron microscopy (TEM). Cross-sectional TEM analyses show that the YNi2B2C film grows in the [001] direction. Y2O3 exists not only as an interlayer at the interface of the YNi2B2C thin film and the MgO substrate but occasionally also in the YNi2B2C thin film near the substrate. The orientation relationships between the YNi2B2C thin film, Y2O3 interlayer, and MgO substrate are determined from electron-diffraction patterns to be MgO(001)[100] ‖ Y2O3(001)[100], YNi2B2C(001)[110] ‖ Y2O3(001)[100] ‖ Y2O3(001)[100, and YNi2B2C(001)[100] ‖ Y2O3(001)[100 1.5‖ Y2O3(001)[100] ‖ Y2O3(001)[100 (the numeral above the “parallel” symbol represents the misorientation (in degrees) between the [100] ‖ Y2O3(001)[100 directions).

Characterization of Heterointerfaces in Thin-Film Transistors by Cross-Sectional Transmission Electron Microscopy

1996 ◽  
Vol 466 ◽  
Author(s):  
K. Kuroda ◽  
S. Tsuji ◽  
Y. Hayashi ◽  
H. Saka
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thin Film Transistors ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multilayered Structure ◽  
Silicon Thin Film ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTHydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) are now widely used as elements for active matrix liquid crystal displays. The nanometer-scale multilayered structure of a-Si:H TFTs has been characterized by cross-sectional transmission electron microscopy (TEM). The discrete layer construction of a faulty TFTs and the generation of defects during manufacturing processes have been investigated. A combination of focused ion beam (FIB) etching and cross-sectional TEM leads to a successful failure analysis. A contamination layer with a thickness of 10–30 nm and microvoids inside multilayers are identified in faulty TFTs. An a-Si layer on silicon nitride (SiNx) is crystallized during TEM observation. Electron energy loss spectroscopy analysis indicates that the diffusion of nitrogen into a-Si layer causes the crystallization.

Processing of epitaxial LiMn2O4 thin film on MgO(110) through metalorganic precursor

2000 ◽  
Vol 15 (12) ◽  
pp. 2750-2757 ◽  
Author(s):  
Yumi H. Ikuhara ◽  
Yuji Iwamoto ◽  
Koichi Kikuta ◽  
Shin-ichi Hirano
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Precursor Solution ◽  
Interface Structure ◽  
Transmission Electron Microscopy Observation ◽  
Microscopy Observation ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Mgo Substrate

Epitaxial LiMn2O4 was successfully synthesized by coating a [Li–Mn–O] metalorganic precursor solution onto MgO (110) substrates at temperatures as low as 350 °C. Cross-sectional transmission electron microscopy observation revealed that the orientation relationship between LiMn2O4 and MgO was (111) LiMn2O4 //(111) MgO, (110) LiMn2O4 //(110) MgO, and [112] LiMn2O4 //[112] MgO, which resulted in the (111) LiMn2O4 planes growing perpendicular to the surface plane of MgO. The interface structure consisted of (111) layers of Mn atoms in the LiMn2O4 crystal aligned with the Mg atoms in the (111) planes of the MgO substrate when viewed along the [112] direction.

Characterization of ZnS Layers Grown by MOCVD for Thin Film Electroluminescence (TFEL) Devices

1992 ◽  
Vol 242 ◽  
Author(s):  
J. E. Yu ◽  
K. S. Jones ◽  
J. Fang ◽  
P. H. Holloway ◽  
B. Pathangey ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Xrd Analysis ◽  
Packing Fraction ◽  
Crystal Defects ◽  
Cubic Phase ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Zns Films

ABSTRACTWe have characterized MOCVD grown ZnS layers for thin film electroluminescence (TFEL) devices. Films with thicknesses ranged from several Å to 2 μm were studied by x-ray diffractometry (XRD), cross-sectional transmission electron microscopy (XTEM), high-resolution transmission electron microscopy (HRTEM), and ultraviolet-visible photospectrometry (UVS). From HRTEM micrographs, it was observed that ZnS films consist of a mixture of hexagonal and cubic phases. Correlation of UV absorption spectra with XRD analysis resulted in a method for quantitative determination of the cubic packing fraction of polymorphic ZnS films. The initial ZnS layer (< 1000 Å) deposited on BaTa2O6 had more hexagonal than cubic phase because of denser crystal defects. However, the fraction of cubic phase increased with the film thickness. In addition to film microstructures, the mean grain size, growth rate, film uniformity, and surface roughness of MOCVD grown ZnS thin films as functions of film thicknesses and substrate temperatures were also calibrated by XTEM results.

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