Effects of sulfur passivation and rapid thermal annealing on the electrical properties of InP metal–insulator semiconductor Schottky diodes

1994 ◽  
Vol 12 (6) ◽  
pp. 3214 ◽  
Author(s):  
G. Eftekhari
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Diodes ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Sulfur Passivation

“On the Growth - and Annealing - Temperature Dependence of the Electrical Properties of Ga0.51In0.49P/GaAs Heterostructures Grown by Mombe”

1992 ◽  
Vol 281 ◽  
Author(s):  
E. C. Paloura ◽  
A. Ginoudi ◽  
N. Frangis ◽  
A. Christou
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Diodes ◽  
Tem Analysis ◽  
Temperature Range ◽  
Best Value ◽  
Deep Electron Trap ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Free Films

ABSTRACTWe study the effect of growth temperature (TG) and post-growth rapid thermal annealing (RTA) on the electrical properties of Schottky diodes fabricated on undoped, lattice-matched Ga0.51In0.49P/GaAs heterostructures. The samples were grown by metalorganic molecular beam epitaxy (MOMBE) in the temperature range 480 – 560°C. Ga0.51In0.49P grown in this temperature range undergoes spinodal decomposition, as shown by cross-section TEM analysis. The dislocation-free epilayers grown at TG≤520°C are characterized by a deep electron trap with an activation energy of 800meV while growth at higher temperatures renders trap-free films. Furthermore, the Schottky barrier ideality factor (n) depends strongly on TG and takes the best value of 1.4 for TG=540°C, while the barrier height remains nearly constant at about 0.75eV. Finally, upon capped rapid thermal annealing the value of n improves while the trap concentration decreases significantly. Based on the presented experimental evidence we can propose that MOMBE growth at 540°C renders films with improved electrical properties.

Effects of Rapid Thermal Annealing on the Electrical Properties of Cobalt Contact top-GaN

2001 ◽  
Vol 40 (Part 1, No. 7) ◽  
pp. 4450-4453
Author(s):  
Je Won Kim ◽  
Seong-Il Kim ◽  
Yong Tae Kim ◽  
Sangsig Kim ◽  
Man Young Sung ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing
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