Electronic and optical characterization of InGaP grown by gas-source molecular-beam epitaxy

1992 ◽  
Vol 10 (2) ◽  
pp. 966 ◽  
Author(s):  
W. Ted Masselink
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Characterization ◽  
Gas Source

scholarly journals Gas‐source molecular‐beam epitaxy using Si2H6and GeH4and x‐ray characterization of Si1−xGex(0≤x≤0.33) alloys

1992 ◽  
Vol 71 (10) ◽  
pp. 4916-4919 ◽  
Author(s):  
S. H. Li ◽  
S. W. Chung ◽  
J. K. Rhee ◽  
P. K. Bhattacharya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray ◽  
Gas Source

Optical Characterization of 100 eV C+ Ion Doped GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Ion Beam ◽  
Optical Characterization ◽  
Mbe Growth ◽  
Impurity Doping ◽  
Specific Emissions ◽  
Hall Effect Measurements

ABSTRACTLow energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature ( Tg ) between 500 °C and 590 °C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, “g” and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg=500 °C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.

Characterization of strain relaxation in As ion implanted Si1−xGex epilayers grown by gas source molecular beam epitaxy

1998 ◽  
Vol 72 (7) ◽  
pp. 845-847 ◽  
Author(s):  
Lyu-fan Zou ◽  
Z. G. Wang ◽  
D. Z. Sun ◽  
T. W. Fan ◽  
X. F. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Gas Source ◽  
Ion Implanted

Structural and optical characterization of alternately strained GaAs/GaP/GaAs/InP superlattices grown by atomic layer molecular beam epitaxy

1993 ◽  
Vol 127 (1-4) ◽  
pp. 623-626 ◽  
Author(s):  
A. Mazuelas ◽  
J. Meléndez ◽  
P.S. Domínguez ◽  
M. Garriga ◽  
C. Ballesteros ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Optical Characterization

scholarly journals OPTICAL CHARACTERIZATION OF Nd3+ DOPED CaF2 LAYERS GROWN BY MOLECULAR BEAM EPITAXY

1991 ◽  
Vol 01 (C7) ◽  
pp. C7-297-C7-301
Author(s):  
L. E. BAUSA ◽  
R. LEGROS ◽  
A. MUNOZ-YAGUE
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Characterization

Infra-red characterization of carbonization of Si surfaces by gas source molecular beam epitaxy

1997 ◽  
Vol 6 (12) ◽  
pp. 1772-1776 ◽  
Author(s):  
M.B. el Mekki ◽  
J. Pascual ◽  
M. Androulidaki ◽  
K. Zekentes ◽  
J. Camassel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source ◽  
Infra Red
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