Phosphorus doping in low-pressure silicon selective epitaxial growth

1993 ◽  
Vol 11 (1) ◽  
pp. 117 ◽  
Author(s):  
Wei-Chung Wang
Keyword(s):  
Epitaxial Growth ◽  
Low Pressure ◽  
Phosphorus Doping ◽  
Selective Epitaxial Growth

A Comparison of Arsine and Tertiarybutylarsine as Precursors for the Selective Epitaxial Growth of GaAs and AlGaAs

1990 ◽  
Vol 204 ◽  
Author(s):  
F.T.J. Smith
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Polycrystalline Material ◽  
Low Pressure ◽  
Selective Growth ◽  
Group V ◽  
Selective Epitaxial Growth ◽  
Crystal Material ◽  
Gaas Substrates ◽  
Increasing Temperature

ABSTRACTWe have investigated the use of tertiarybutylarsine (tBAs) as an As source in the surface-selective growth of GaAs and AlGaAs by low-pressure OMVPE. Deposition was carried out onto GaAs substrates partly masked with SiNx. Triethylgallium (TEGa) and trimethylaluminum (TMAl) were used as precursors along with either arsine or tBAs. Growth pressures were in the range 0.3 to 3.0 Torr. The usual trends of decreasing deposition on the mask with increasing temperature, decreasing group V/III ratio, and decreasing pressure were observed. At very low group V/III ratios, for either As precursor, single crystal material with a pitted surface was obtained. A reduction in the nucleation of polycrystalline material on the mask was observed when tBAs was used in place of AsH3.

scholarly journals Low pressure silicon selective epitaxial growth and its thermodynamic considerations

1993 ◽  
Vol 03 (C3) ◽  
pp. C3-51-C3-58
Author(s):  
L. YE ◽  
B. M. ARMSTRONG ◽  
H. S. GAMBLE
Keyword(s):  
Epitaxial Growth ◽  
Low Pressure ◽  
Selective Epitaxial Growth

Selective Epitaxial Growth of Strained Silicon-Germanium Films in Tubular Hot-Wall Low Pressure Chemical Vapor Deposition Systems

1996 ◽  
Vol 448 ◽  
Author(s):  
I -M. Leet ◽  
W. -C. Wang ◽  
M. T. K. Koh ◽  
J.P. Denton ◽  
E. P. Kvam ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Defect Density ◽  
Low Cost ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Selective Epitaxial Growth ◽  
Pressure Chemical

AbstractSelective epitaxial growth (SEG) of silicon-germanium (SiGe) films on patterned-oxide silicon substrates, using a tubular hot-wall low pressure chemical vapor deposition (LPCVD) system, is demonstrated in this study. This conventional system is proposed as a low cost alternative for SiGe epitaxial growth. Three process improvements needed to achieve quality growth are discussed. First, the hydrogen bake process is modified to eliminate Ge-outgassing. Secondly, a Si SEG buffer layer is deposited prior to SiGe SEG. Finally, a small flow of dichlorosilane is introduced during the temperature ramp-down period prior to SiGe SEG. The growth results are discussed in terms of growth selectivity, thickness uniformity, growth rate, defect density, SiGe film composition, and electrical properties.

Selective epitaxial growth of GaAs by low-pressure MOVPE

1985 ◽  
Vol 73 (1) ◽  
pp. 73-76 ◽  
Author(s):  
K. Kamon ◽  
S. Takagishi ◽  
H. Mori
Keyword(s):  
Epitaxial Growth ◽  
Low Pressure ◽  
Selective Epitaxial Growth
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