Seam line defects in silicon‐on‐insulator by merged epitaxial lateral overgrowth

1994 ◽  
Vol 65 (13) ◽  
pp. 1638-1640 ◽  
Author(s):  
Yang‐Chin Shih ◽  
Jen‐Chung Lou ◽  
William G. Oldham
Keyword(s):  
Silicon On Insulator ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Line Defects

The Study of Seam Line Defects in Silicon-On-Oxide by Merged Epitaxial Lateral Overgrowth

1993 ◽  
Vol 317 ◽  
Author(s):  
Yangchin Shih ◽  
J. C. Lou ◽  
W. G. Oldham
Keyword(s):  
Epitaxial Film ◽  
Single Crystal Silicon ◽  
Silicon On Insulator ◽  
Epitaxial Lateral Overgrowth ◽  
Formation Mechanisms ◽  
Crystal Silicon ◽  
Lateral Overgrowth ◽  
Transmission Electron ◽  
Low Dislocation Density ◽  
Line Defects

ABSTRACTSelective Epitaxial Growth of silicon through windows in SiO2 using low-temperature SiH2Cl2/H2 chemistry in a hot wall LPCVD system was used to form Epitaxial Lateral Overgrowth (ELO) regions of Silicon-on-insulator. In cases where pattern ‘width was less than two times epi film thickness, the ELO regions merged to form a continuous epitaxial film. In this study, 2.5 μm thick single crystal silicon layers were grown perfectly over oxide regions with very low dislocation density (< 104/cm2). The epitaxial Si/oxide interfaces were smooth and defect-free. However, a “seam”-like defect was occasionally observed in the epitaxial film on top of the oxide, at the locations where two growth fronts merged together. This crystallographic defect in some case extends through the whole Silicon-on-Oxide film and would be expected to be detrimental to electronic devices built on or close to it. The sturctures of these seam line defects were investigated in detail by transmission electron Microscopy (TEM). The formation mechanisms of these seam line defects and possible origins are discussed.

Deep centers in GaN layers grown on epitaxial lateral overgrowth templates by metalorganic chemical vapor deposition

2006 ◽  
Vol 955 ◽  
Author(s):  
Serguei A Chevtchenko ◽  
J. Xie ◽  
Y. Fu ◽  
X. Ni ◽  
H. Morkoç
Keyword(s):  
Deep Level ◽  
Reference Sample ◽  
Chemical Vapor ◽  
Dislocation Core ◽  
Epitaxial Lateral Overgrowth ◽  
Threading Dislocation ◽  
Lateral Overgrowth ◽  
Threading Dislocation Density ◽  
Line Defects ◽  
Transient Spectroscopy

ABSTRACTThe dependence of traps and their concentration in GaN on the quality of templates, on which the layers are grown, has been studied by deep-level transient spectroscopy (DLTS). Thin GaN layers studied were grown on GaN templates employing conventional epitaxial lateral overgrowth (ELO) and nano-ELO with SiNx nanonetwork. The concentrations of traps found in these layers were compared with a reference sample grown on a standard GaN template not utilizing ELO. Two traps A (0.55 eV – 0.58 eV) and B (0.20 eV – 0.23 eV) were detected in the temperature range from 80 K to 400 K. A reduction of traps in layers grown on the ELO and nano-ELO templates was noted. We attribute this reduction to the reduction of threading dislocation density and as a result reduced capture of point defects and complexes as part of dislocation core structure and/or reduced formation of defects and complexes in the vicinity of line defects where the formation can be energetically favorable.

SOI Interface Structures in Selective Epitaxial Growth

1991 ◽  
Vol 238 ◽  
Author(s):  
Zara S. Weng ◽  
R. Gronsky ◽  
J. C. Lou ◽  
W. G. Oldham
Keyword(s):  
Epitaxial Growth ◽  
Silicon On Insulator ◽  
Epitaxial Lateral Overgrowth ◽  
Structural Defects ◽  
Selective Epitaxial Growth ◽  
Lateral Overgrowth ◽  
Silicon Growth ◽  
Interface Structures ◽  
Oxygen Fluorine

ABSTRACTSilicon-on-insulator structures were formed by the selective epitaxial growth (SEG) of silicon and the epitaxial lateral overgrowth (ELO) of oxide shapes using an LPCVD hot-walled reactor at 850°C. The homoepitaxial interface changed character with modifications of the gas composition during the in-situ pre-epitaxial bake at 900°C. HREM images show ellipsoid-shaped inclusions lying along the homoepitaxial interface for silicon growth conducted with no dichlorosilane (DCS) flow during the prebake in H2. SIMS analysis indicates a large oxygen, fluorine, and carbon concentration at the interface. For structures grown with a small DCS flow in addition to H2 during the prebake, the homoepitaxial structural defects and the oxygen, fluorine, and carbon peaks are removed.

EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR

2009 ◽  
Vol 23 (15) ◽  
pp. 1881-1887 ◽  
Author(s):  
BO ZHANG ◽  
JING CHEN ◽  
XI WANG ◽  
AIMIN WU ◽  
JIEXIN LUO ◽  
...  
Keyword(s):  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon On Insulator ◽  
Epitaxial Lateral Overgrowth ◽  
Micro Raman Spectroscopy ◽  
Lateral Overgrowth ◽  
Transmission Electron ◽  
Single Process ◽  
Soi Substrates

From a single process, GaN layers were laterally overgrown on maskless stripe-patterned (111) silicon-on-insulator (SOI) substrates by metalorganic chemical vapor deposition. The influence of stress on the behavior of dislocations at the coalescence during growth was observed using transmission electron microscopy (TEM). Improvement of the crystalline quality of the GaN layer was demonstrated by TEM and micro-Raman spectroscopy. Furthermore, the benefits of SOI substrates for GaN growth are also discussed.

Study on shallow donor-type impurities of GaN epilayer regrown by epitaxial lateral overgrowth technique

2021 ◽  
Vol 118 (1) ◽  
pp. 012105
Author(s):  
Wenxin Tang ◽  
Fu Chen ◽  
Li zhang ◽  
Kun Xu ◽  
Xuan Zhang ◽  
...  
Keyword(s):  
Shallow Donor ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Donor Type
Sign in / Sign up

Export Citation Format

Share Document