Direct determination of impact ionization rates near threshold in Al0.9Ga0.1As and GaAs using molecular-beam epitaxially grown GaAs/Al0.9Ga0.1As structures and soft x-ray photoemission

1992 ◽  
Vol 10 (4) ◽  
pp. 2046 ◽  
Author(s):  
E. A. Eklund
Keyword(s):  
Molecular Beam ◽  
Impact Ionization ◽  
Direct Determination ◽  
X Ray ◽  
Ionization Rates ◽  
Near Threshold

Direct determination of impact-ionization rates near threshold in semiconductors using soft-x-ray photoemission

1992 ◽  
Vol 68 (6) ◽  
pp. 831-834 ◽  
Author(s):  
E. A. Eklund ◽  
P. D. Kirchner ◽  
D. K. Shuh ◽  
F. R. McFeely ◽  
E. Cartier
Keyword(s):  
Impact Ionization ◽  
Direct Determination ◽  
X Ray ◽  
Ionization Rates ◽  
Near Threshold

Direct determination of the wave field of an x-ray nanobeam

2008 ◽  
Vol 77 (1) ◽  
Author(s):  
Hidekazu Mimura ◽  
Hirokatsu Yumoto ◽  
Satoshi Matsuyama ◽  
Soichiro Handa ◽  
Takashi Kimura ◽  
...  
Keyword(s):  
Wave Field ◽  
Direct Determination ◽  
X Ray

Direct Determination of Stress Levels in Sputtered Films by means of X-Ray Diffraction Topographic Method

1987 ◽  
Vol 26 (Part 1, No. 1) ◽  
pp. 157-161 ◽  
Author(s):  
Osamu Nittono ◽  
Yoshihiro Sadamoto ◽  
Sheng Kai Gong
Keyword(s):  
Direct Determination ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputtered Films ◽  
Stress Levels

Direct determination of molecular orbital symmetry ofH2S using polarized x-ray emission

1991 ◽  
Vol 43 (1) ◽  
pp. 235-241 ◽  
Author(s):  
R. Mayer ◽  
D. W. Lindle ◽  
S. H. Southworth ◽  
P. L. Cowan
Keyword(s):  
Molecular Orbital ◽  
Direct Determination ◽  
Orbital Symmetry ◽  
X Ray
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