GaSb-oxide removal and surface passivation using an electron cyclotron resonance hydrogen source

1992 ◽  
Vol 10 (4) ◽  
pp. 1856 ◽  
Author(s):  
Z. Lu
Keyword(s):  
Cyclotron Resonance ◽  
Surface Passivation ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Oxide Removal

GaAs‐oxide removal using an electron cyclotron resonance hydrogen plasma

1991 ◽  
Vol 58 (11) ◽  
pp. 1143-1145 ◽  
Author(s):  
Z. Lu ◽  
M. T. Schmidt ◽  
D. Chen ◽  
R. M. Osgood ◽  
W. M. Holber ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Electron Cyclotron ◽  
Oxide Removal

scholarly journals Erratum: ‘‘GaAs‐oxide removal using an electron cyclotron resonance hydrogen plasma’’ [Appl. Phys. Lett. 58, 1143 (1991)]

1992 ◽  
Vol 61 (5) ◽  
pp. 616-616
Author(s):  
Z. Lu ◽  
M. T. Schmidt ◽  
D. Chen ◽  
R. M. Osgood ◽  
W. M. Holber ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Electron Cyclotron ◽  
Oxide Removal

Plasma-Induced Damage and Passivation of GaN in Electron Cyclotron Resonance Excited N2 Plasma Source

2000 ◽  
Vol 622 ◽  
Author(s):  
J. T. Hsieh ◽  
O. Breitschädel ◽  
M. Rittner ◽  
L. W. Fu ◽  
H. Schweizer
Keyword(s):  
Breakdown Voltage ◽  
Cyclotron Resonance ◽  
Surface Passivation ◽  
Electron Cyclotron Resonance ◽  
Orthogonal Design ◽  
Ion Beam ◽  
Electron Cyclotron ◽  
Optimum Operating ◽  
Plasma Exposure ◽  
Taguchi Orthogonal Design

ABSTRACTElectron cyclotron resonance (ECR) excited N2 plasma exposure were performed to explore a possibility of a robust surface passivation on Ar+ ion beam etched GaN. We adopted Taguchi orthogonal design to optimize the ECR operating parameters with respect to reverse breakdown voltage (VB) and then used the results to determine the VB dependence on the parameters close to the optimum operating point. Rather consistent results were obtained by Taguchi and normal experimental methods. It is clearly indicated that the radio frequency (rf) chuck power play the most important role on the plasma passivation. After N2 plasma treatment, the diode reverse breakdown voltage is drastically restored from 15V to 95V. With the aid of N2 plasma exposure, the Schottky characteristics of ion beam etched GaN can be thus effectively improved.

Anisotropic electron cyclotron resonance etching of tungsten films on GaAs

1994 ◽  
Vol 30 (1) ◽  
pp. 84-85 ◽  
Author(s):  
R.J. Shul ◽  
D.J. Rieger ◽  
C. Constantine ◽  
A.G. Baca ◽  
C. Barratt
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron
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