Application of x-ray lithography with a single-layer resist process to subquartermicron large scale integrated circuit fabrication

1992 ◽  
Vol 10 (6) ◽  
pp. 3145 ◽  
Author(s):  
Kimiyoshi Deguchi
Keyword(s):  
Integrated Circuit ◽  
Large Scale ◽  
Single Layer ◽  
X Ray ◽  
Integrated Circuit Fabrication ◽  
Circuit Fabrication

State-of-the-Art Evaluation of Ultra-Clean Ulsi Processes

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Fischer-Colbrie ◽  
S. S. Laderman ◽  
S. Brennan ◽  
S. Ghosh ◽  
N. Takaura ◽  
...  
Keyword(s):  
Detection Limit ◽  
Integrated Circuit ◽  
Recent Progress ◽  
State Of The Art ◽  
Total Reflection ◽  
X Ray ◽  
Integrated Circuit Fabrication ◽  
Counting Time ◽  
Circuit Fabrication ◽  
Wafer Surfaces

ABSTRACTThis work describes recent progress in implementation and applications of synchrotron radiation total reflection x-ray fluorescence (SR-TXRF) to measure trace metals on wafer surfaces. To date, we have achieved state-of-the-art transition metal sensitivity of 3×108 atoms/cm2 (˜3fg) for 1000 sec. counting time for impurities which have an monolayer-like distribution on the surface and <1fg for droplet-like impurities. Recent instrumentation breakthroughs include reduction of detector parasitic backgrounds (particularly Cu) to below our present detection limit, 150 and 200mm whole-wafer handling, wafer-mapping capability and a cleanroom mini-environment. With these upgrades, measurements were made of wafers from various steps in the integrated circuit fabrication process. These results demonstrate that synchtron radiation brings TXRF into a new and useful regime. Further developments are underway to increase throughput and access for broader application.

Application of Synchrotron and Flash X-Ray Topography to Improved Processing of Electronic Materials

1991 ◽  
Vol 35 (A) ◽  
pp. 239-245 ◽  
Author(s):  
J.M. Winter ◽  
R.E. Green ◽  
K.A. Green
Keyword(s):  
Integrated Circuit ◽  
Electronic Materials ◽  
X Rays ◽  
Defect Structures ◽  
X Ray ◽  
Integrated Circuit Fabrication ◽  
Circuit Fabrication ◽  
Synchrotron Light ◽  
Beam Transmission ◽  
Image Defect

AbstractWhite beam transmission topography was used to image defect structures in gallium arsenide single crystal substrates representative of those used for microwave integrated circuit fabrication. A scanning topographic camera was developed for Beamline X-19C at the National Synchrotron Light Source. Acquiring film topographs within a particular range of scan rates and x-ray fluxes was found to produce distorted images. The distortions were shown to be thermoelastic, arising from inhomogeneous deposition of thermal energy through the absorption of residual x-rays. The problem could be circumvented using faster scans with some sacrifice in spatial resolution. Real time electrooptic topographs were recorded using x-ray fluxes about one percent of those used for the film topographs. The potential for reducing the flux requirement to even lower levels which would be accessible to flash x-ray generators is considered.

Evolution of Stress During Formation of Titanium Disilicide by Rta and Tube Furnace Annealing

1990 ◽  
Vol 202 ◽  
Author(s):  
J.F. Jongste ◽  
O.B. Loopstra ◽  
G.C.A.M. Janssen ◽  
S. Radelaar
Keyword(s):  
Integrated Circuit ◽  
Thermal Processing ◽  
Reaction Rates ◽  
Titanium Disilicide ◽  
Furnace Annealing ◽  
Integrated Circuit Fabrication ◽  
Annealing Step ◽  
Circuit Fabrication ◽  
The Difference ◽  
Processing Steps

Integrated circuit fabrication consists of many processing steps: e.g. lithography, etching, implantation and metallization. Some of these processes are combined with thermal processing. Heat treatments require special attention because previous fabrication steps may be influenced: e.g. dopant profiles may be deteriorated. The amount of interference of an annealing step with a former process is determined by the ratio of the reaction rates (and hence by the difference in activation energies).

A Fresh Insight into Film Morphology Measurement Techniques for Advanced Ulsi Manufacturing

1993 ◽  
Vol 309 ◽  
Author(s):  
Seshadri Ramaswami
Keyword(s):  
Grain Size ◽  
Integrated Circuit ◽  
Measurement Techniques ◽  
Film Morphology ◽  
Integrated Circuit Fabrication ◽  
Circuit Fabrication ◽  
Non Destructive ◽  
Fresh Insight ◽  
Insight Into

AbstractA laser based non-destructive technique has been used to study the morphology of sputterdeposited aluminum alloy films. The data emanating from the Therma-wave Imager that makes use of this principle, has been correlated with reflectivity, grain size and micro-roughness of the film. In addition, through the use of a case study, this paper demonstrates the utility of this application as an in-line monitor in an integrated circuit fabrication line.

Silicon Rapid Thermal Processing with Ripple Pyrometry

1997 ◽  
Vol 502 ◽  
Author(s):  
A. T. Fiory
Keyword(s):  
Integrated Circuit ◽  
Thermal Processing ◽  
Wide Field ◽  
Loop Control ◽  
Dopant Activation ◽  
Integrated Circuit Fabrication ◽  
Metal Silicides ◽  
Circuit Fabrication ◽  
Infrared Lamps

ABSTRACTThermal processing in silicon integrated circuit fabrication steps for dopant activation, metal silicides, annealing, and oxidation commonly uses single-wafer furnaces that rapidly heat wafers with incandescent infrared lamps. Radiation pyrometers and thermocouple probes are the principle methods of measuring wafer temperature for closed-loop control of rapid thermal processes. The challenge with thermocouples is in dealing with heat from the lamps and non-ideal thermally resistive wafer contact. The challenge with pyrometry is in compensating for the variable emissivity of wafer surfaces and suppressing interference from the lamps. Typical deposited or grown layers of silicon nitride, silicon dioxide, and polycrystalline silicon can produce dramatic changes in emissivity. Layer thicknesses and composition are generally not known with sufficient accuracy, so a method for real time in situ emissivity compensation is required. Accufiber introduced a “ripple technique” to address this issue. The idea is to use two probes, separately sensing radiation from the wafer and the lamps, and extracting AC and quasi-DC parts from each. The AC signals provide a measure of the reflectivity of the wafer, and thence emissivity, as well as the fraction of reflected lamp radiation present in the DC signals. Lucent Technologies introduced a method of using AC lamp ripple to measure wafer temperatures with two radiation probes at a wall in the furnace. One probe views radiation emanating from the wafer through a gap in the lamp array. The other probe has a wide field of view to include lamp radiation. The accuracy of Lucent devices, determined from process results on wafers with various emissivities, is typically in the range of 12°C to 18°C at three standard deviations.

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