Extrinsic p-doped HgCdTe grown by direct alloy growth organometallic epitaxy

1991 ◽  
Vol 9 (3) ◽  
pp. 1705 ◽  
Author(s):  
N. R. Taskar
Keyword(s):  
Direct Alloy ◽  
Organometallic Epitaxy

The mercury pressure dependence of arsenic doping in HgCdTe, grown by organometallic epitaxy (direct alloy growth process)

1991 ◽  
Vol 110 (4) ◽  
pp. 692-696 ◽  
Author(s):  
N.R. Taskar ◽  
I.B. Bhat ◽  
K.K. Parat ◽  
S.K. Ghandhi ◽  
G.J. Scilla
Keyword(s):  
Pressure Dependence ◽  
Growth Process ◽  
Arsenic Doping ◽  
Direct Alloy ◽  
Organometallic Epitaxy

Extrinsic p-doped HgCdTe grown by direct alloy growth organometallic epitaxy

1991 ◽  
Author(s):  
N. R. Taskar ◽  
I. B. Bhat ◽  
K. K. Parat ◽  
S. K. Ghandhi ◽  
G. J. Scilla
Keyword(s):  
Direct Alloy ◽  
Organometallic Epitaxy

High quality planar HgCdTe photodiodes fabricated by the organometallic epitaxy (Direct Alloy Growth Process)

1991 ◽  
Vol 58 (8) ◽  
pp. 828-830 ◽  
Author(s):  
S. K. Ghandhi ◽  
K. K. Parat ◽  
H. Ehsani ◽  
I. B. Bhat
Keyword(s):  
Growth Process ◽  
High Quality ◽  
Direct Alloy ◽  
Hgcdte Photodiodes ◽  
Organometallic Epitaxy

Organometallic Epitaxy of Extrinsic N-Type HgCdTe Using Trimethylindium

1990 ◽  
Vol 216 ◽  
Author(s):  
N.R. Taskar ◽  
K.K. Parat ◽  
I.B. Bhat ◽  
S.K. Chandhi
Keyword(s):  
Partial Pressure ◽  
Cadmium Telluride ◽  
Mercury Cadmium Telluride ◽  
Doping Concentration ◽  
Band Edge ◽  
Pressure Characteristic ◽  
Indium Doping ◽  
Direct Alloy ◽  
Dopant Source ◽  
Organometallic Epitaxy

ABSTRACTIndium doping of mercury cadmium telluride, grown by organometallic epitaxy, has been accomplished using trimethylindium (TMIn) as the dopant source. Layers, grown by the Direct Alloy Growth (DAG) process, exhibited a linear doping vs TMIn partial pressure characteristic over the 5 × 1016 to 3 × 1018 cm−3 range. A maximum doping concentration of 5 × 1018 cm−3 was obtained in these layers.The optical band edge in these layers was observed to move to higher energy with increased doping. It is shown that this is caused by the Burstein-Moss shift of the bandedge with doping, and that the Cd fraction is independent of the doping concentration.

Organometallic epitaxy of HgCdTe on CdTeSe substrates with high compositional uniformity

1988 ◽  
Vol 52 (5) ◽  
pp. 392-394 ◽  
Author(s):  
Sorab K. Ghandhi ◽  
Ishwara B. Bhat ◽  
Hamid Fardi
Keyword(s):  
Compositional Uniformity ◽  
Organometallic Epitaxy
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