High quality planar HgCdTe photodiodes fabricated by the organometallic epitaxy (Direct Alloy Growth Process)

1991 ◽  
Vol 58 (8) ◽  
pp. 828-830 ◽  
Author(s):  
S. K. Ghandhi ◽  
K. K. Parat ◽  
H. Ehsani ◽  
I. B. Bhat
Keyword(s):  
Growth Process ◽  
High Quality ◽  
Direct Alloy ◽  
Hgcdte Photodiodes ◽  
Organometallic Epitaxy

The mercury pressure dependence of arsenic doping in HgCdTe, grown by organometallic epitaxy (direct alloy growth process)

1991 ◽  
Vol 110 (4) ◽  
pp. 692-696 ◽  
Author(s):  
N.R. Taskar ◽  
I.B. Bhat ◽  
K.K. Parat ◽  
S.K. Ghandhi ◽  
G.J. Scilla
Keyword(s):  
Pressure Dependence ◽  
Growth Process ◽  
Arsenic Doping ◽  
Direct Alloy ◽  
Organometallic Epitaxy

Low Temperature OMVPE of ZnSe from Alkyl Sources Using a Plasma Disk Lamp

1988 ◽  
Vol 129 ◽  
Author(s):  
K. L. Tokuda ◽  
B. Pihlstrom ◽  
D. W. Kisker ◽  
M. Lamont Schnoes ◽  
G. J. Collins
Keyword(s):  
Growth Process ◽  
Vacuum Ultraviolet ◽  
Source Material ◽  
Organometallic Vapor Phase Epitaxy ◽  
Impurity Incorporation ◽  
High Quality ◽  
Selenium Compound ◽  
Ultraviolet Photons ◽  
Reduced Toxicity ◽  
Source Materials

ABSTRACTThe growth of high quality ZnSe by organometallic vapor phase epitaxy (OMVPE) has generally been hindered because of parasitic source pre-reactions or relatively high source decomposition temperatures. In this work, we have used vacuum ultraviolet photons generated by a disk-plasma lamp to assist the ZnSe growth process using diethylselenium and diethylzinc as source materials. This approach has resulted in satisfactory growth rates and high material quality at temperatures as low as 250°C, without the limitations of prereaction typically observed when H2Se is used for the selenium source material. In addition, the alkyl selenium compound offers advantages due to reduced toxicity compared to H2Se. This new, low-growth-temperature process thus offers the possibility of improved stoichiometry and impurity incorporation control as well as a reduced thermal effect on the underlying substrate during growth. At the same time, the advantages of excellent morphology and uniformity typically exhibited by the alkylbased growth processes are retained.

Purification of organic compounds in high-quality crystal growth process

2000 ◽  
Vol 66 (2-3) ◽  
pp. 303-308 ◽  
Author(s):  
C Salati ◽  
G Mignoni ◽  
M Zha ◽  
L Zanotti ◽  
C Mucchino ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Organic Compounds ◽  
Growth Process ◽  
High Quality ◽  
Crystal Growth Process

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

The Role of Porous Graphite Plate for High Quality SiC Crystal Growth by PVT Method

2016 ◽  
Vol 858 ◽  
pp. 113-116
Author(s):  
Hee Won Shin ◽  
Hee Jun Lee ◽  
Hwang Ju Kim ◽  
Dong Hoon Lee ◽  
Mi Seon Park ◽  
...  
Keyword(s):  
Photoluminescence Spectrum ◽  
Growth Process ◽  
Grown Crystal ◽  
Lower Intensity ◽  
High Quality ◽  
Graphite Plate ◽  
Porous Graphite ◽  
Before And After

The present research is focused to investigate a role of the porous graphite (PG) plate that could improve the quality of 4H-SiC crystal. The grown crystal in porous graphite inserted crucible showed the lower intensity of Al, B and Ti impurity concentration than SiC crystal grown in conventional crucible. The porous graphite plate before and after the growth process has been investigated by a Raman spectroscopy and a photoluminescence spectrum (PL). According to the analysis result, it was confirmed that the porous graphite plate had the effect of suppressing impurities supplied to SiC single crystal during the growth process.

Using a Small Size and High Quality Monocrystal as a Seed Material For SRL-CP Growth Process

2000 ◽  
pp. 452-454
Author(s):  
A. Jokhov ◽  
T. Izumi ◽  
M. Egami ◽  
S. Koyama ◽  
Y. Shiohara
Keyword(s):  
Growth Process ◽  
High Quality ◽  
Seed Material

Recent Developments in Modeling of Liquid Phase Electroepitaxy: A Continuum Approach

1996 ◽  
Vol 49 (12) ◽  
pp. 477-495 ◽  
Author(s):  
Sadik Dost
Keyword(s):  
Liquid Phase ◽  
High Speed ◽  
Growth Process ◽  
Theoretical Models ◽  
Surface Kinetics ◽  
Thermoelectric Effects ◽  
High Quality ◽  
Growth Technique ◽  
Recent Developments ◽  
Temperature Solution

Liquid phase electroepitaxy (LPEE) is a low temperature, solution growth technique which has been proven to be successful in growing high quality, thick compound and alloy semiconducting single crystal layers. The availability of such high quality alloy layers would open new horizons in the production of optoelectronic and high-speed devices. Due to the technological importance of this crystal growth technique, some theoretical models for its growth process have been developed recently to provide needed information to experimentalists to develop growth configurations for reproducible desired single crystals. These models have shed light on various aspects of the LPEE growth process. This review article, with 71 references, provides the reader with an overview of recently developed macroscopic continuum models for the LPEE growth process of binary and ternary semiconductors. Fundamental equations of these models are obtained from the basic principles of electrodynamics and thermomechanics of the continuum. The models include various thermoelectric effects observed in LPEE and also incorporates microscopic surface phenomena such as surface kinetics. Results of numerical simulations are presented, and compared with available experimental data. The significance of research results are discussed.

scholarly journals CSD-Grown Y1−xGdxBa2Cu3O7−δ-BaHfO3 Nanocomposite Films on Ni5W and IBAD Technical Substrates

Nanomaterials ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 21 ◽  
Author(s):  
Pablo Cayado ◽  
Hannes Rijckaert ◽  
Manuela Erbe ◽  
Marco Langer ◽  
Alexandra Jung ◽  
...  
Keyword(s):  
Chemical Solution Deposition ◽  
Growth Process ◽  
Growth Conditions ◽  
Coated Conductors ◽  
Nanocomposite Films ◽  
Chemical Solution ◽  
Superconducting Properties ◽  
High Quality ◽  
Solution Deposition ◽  
Structure Morphology

Chemical solution deposition (CSD) was used to grow Y1−xGdxBa2Cu3O7−δ-BaHfO3 (YGBCO-BHO) nanocomposite films containing 12 mol% BHO nanoparticles and various amounts of Gd, x, on two kinds of buffered metallic tapes: Ni5W and IBAD. The influence of the rare-earth stoichiometry on structure, morphology and superconducting properties of these films was studied. The growth process was carefully studied in order to find the most appropriate growth conditions for each composition and substrate. This led to a clear improvement in film quality, probably due to the reduction of BaCeO3 formation. In general, the superconducting properties of the films on Ni5W are significantly better. For x > 0.5, epitaxial ~270 nm thick YGBCO-BHO films with Tc > 93 K and self-field Jc at 77 K ~2 MA/cm² were obtained on Ni5W. These results highlight the potential of this approach for the fabrication of high-quality coated conductors.

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