Thermal stability of ohmic contacts to n-GaAs formed by scanned electron beam processing

1990 ◽  
Vol 8 (4) ◽  
pp. 618 ◽  
Author(s):  
K. Prasad
Keyword(s):  
Thermal Stability ◽  
Electron Beam ◽  
Ohmic Contacts ◽  
Electron Beam Processing ◽  
Thermal Stability Of

Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC

2015 ◽  
Vol 117 (2) ◽  
pp. 025703 ◽  
Author(s):  
Hailong Yu ◽  
Xufang Zhang ◽  
Huajun Shen ◽  
Yidan Tang ◽  
Yun Bai ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ohmic Contacts ◽  
P Type ◽  
Thermal Stability Of

scholarly journals Thermal stability of low-resistance Au Ohmic contacts to GeTe

2017 ◽  
Vol 621 ◽  
pp. 145-150 ◽  
Author(s):  
Haila M. Aldosari ◽  
Kayla A. Cooley ◽  
Shih-Ying Yu ◽  
Katherine C. Kragh-Buetow ◽  
Suzanne E. Mohney
Keyword(s):  
Thermal Stability ◽  
Ohmic Contacts ◽  
Low Resistance ◽  
Thermal Stability Of

Thermal Stability of Ti/Pt/Au Non-Alloyed Ohmic Contacts on InN

1994 ◽  
Vol 337 ◽  
Author(s):  
F. Ren ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk
Keyword(s):  
Thermal Stability ◽  
Doping Level ◽  
Room Temperature ◽  
Ohmic Contacts ◽  
Contact Resistivity ◽  
High Doping Level ◽  
Transmission Line Method ◽  
Different Temperatures ◽  
Contact Resistivities ◽  
Thermal Stability Of

ABSTRACTExtremely low contact resistance of non-alloyed Ti/Pt/Au metallization on n-type InN is demonstrated. The contacts were annealed at different temperatures up to 420 °C to investigate their thermal stability. A low contact resistivity of 1.8 x 10-7 ohm-cm2 was measured at room temperature using the transmission line method. This was due to the extremely high doping level (5 x 1020 cm-3) in the InN. After 300 °C annealing, the contact resistivity increased to 2.4 x 10-7 ohm-cm2- For 360 °C annealing, the contact morphology showed some degradation, but the contact resistivity was almost the same as at 300 °C. There was serious degradation of the contacts after 420 °C annealing. The morphology became very rough, and the contact and sheet resistances increased by factors of 3-5 times. This degradation is believed due to the decomposition of the InN film. The contact resistivities between n-type epitaxial GaAs and InN were also investigated, and showed values around 10-4 ohm-cm2.

Structural Processes in Gold-Based Metallization During the Formation of Ohmic Contacts to GaSb

1995 ◽  
Vol 403 ◽  
Author(s):  
A. Piotrowska ◽  
E. Kańifiska ◽  
M. Guziewicz ◽  
E. Mizera ◽  
E. Dynowska ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Contact System ◽  
Contact Reaction ◽  
Annealing Behavior ◽  
Thermally Activated ◽  
Combined Use ◽  
Semiconductor System ◽  
Thermal Stability Of

AbstractAnnealing behavior of Au, AuZn, and AuSb metallization on GaSb have been investigated by the combined use of RBS, XRD, TEM, and I-V characterization. The results give evidence that the thermally activated contact reaction strongly depends on the particular elements incorporated in the Au layer. Pure Au reacts with GaSb at 100°C. The addition of Zn to Au metallization increases the thermal stability of the metallization/semiconductor system to 200°C. Antimony, forming with gold the AuSb2 phase in metallization, provides the most stable ohmic contact system.

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