Electrical properties and defect states in ion beam deposited poly (p-phenylene sulfide) films

1989 ◽  
Vol 7 (6) ◽  
pp. 2062 ◽  
Author(s):  
Katsuhiko Suzuki
Keyword(s):  
Electrical Properties ◽  
Ion Beam ◽  
Defect States ◽  
Phenylene Sulfide

Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

2005 ◽  
Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Electrical Properties ◽  
Process Parameters ◽  
Thermal Effects ◽  
Silicon Surface ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Schottky Barriers ◽  
Material Analysis ◽  
Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

2005 ◽  
Vol 492 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Zhi Yan ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Qing Wan ◽  
Fu Min Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Ion Beam ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Ion Beam Assisted Deposition ◽  
P Type

OPTICAL AND ELECTRICAL PROPERTIES OF ARGON ION BEAM IRRADIATED PVA/Ag NANOCOMPOSITES

2017 ◽  
Vol 24 (03) ◽  
pp. 1750038 ◽  
Author(s):  
A. M. ABDEL REHEEM ◽  
A. ATTA ◽  
T. A. AFIFY
Keyword(s):  
Silver Nanoparticles ◽  
Electrical Properties ◽  
Ion Beam ◽  
Composite Films ◽  
Band Gap Energy ◽  
Dielectric Measurement ◽  
Optical And Electrical Properties ◽  
Structure Property ◽  
Casting Technique ◽  
Argon Ion

In this work, PVA/Ag nanocomposites films were prepared using solution casting technique, these films were irradiated with Argon ion beam to modify the structure. The main objective of the study is to enhance the optical and electrical properties of the polymer nanocomposites films by irradiation. The conventional characterization techniques such as UV–Visible spectroscopy, X-ray diffraction (XRD), Fourier transform infrared (FTIR), transmission electron microscope (TEM) and dielectric measurement are employed to understand the structure–property relations. FTIR analysis of these composite films shows chemical changes and a significant impact on them can be observed after irradiation. After doping, the XRD data shows silver nanoparticles formation in the PVA polymer. The band gap energy of samples is decreased with increases in the concentration of silver nanoparticles and ion beam fluence, which gives clear indication that ion beam irradiation induced defects are formed in the composite systems. The electrical conductivity, dielectric loss [Formula: see text] and dielectric constant [Formula: see text] are increased with increasing ion beam fluence and Ag dopant concentration.

Reactive‐ion‐beam‐sputtered WNxfilms on silicon: Growth mode and electrical properties

1994 ◽  
Vol 75 (8) ◽  
pp. 3900-3907 ◽  
Author(s):  
M. Eizenberg ◽  
F. Meyer ◽  
A. Benhocine ◽  
D. Bouchier
Keyword(s):  
Electrical Properties ◽  
Ion Beam ◽  
Growth Mode ◽  
Silicon Growth

Electrical properties of ion-implanted poly(p-phenylene sulfide)

1983 ◽  
Vol 21 (4) ◽  
pp. 537-551 ◽  
Author(s):  
H. Mazurek ◽  
D. R. Day ◽  
E. W. Maby ◽  
J. S. Abel ◽  
S. D. Senturia ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Phenylene Sulfide ◽  
Ion Implanted

Structure, Optical and Electrical Properties of Pulsed Laser Deposited and Ion Beam Deposited CNx Films

1997 ◽  
Vol 498 ◽  
Author(s):  
K. F. Chan ◽  
X.-A. Zhao ◽  
C. W. Ong
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Film Structure ◽  
Laser Deposition ◽  
Optical And Electrical Properties ◽  
Ion Beam Deposition ◽  
Valence Bands ◽  
Beam Deposition

ABSTRACTCNx films were deposited using pulsed laser deposition (PLD) and ion beam deposition (IBD). The PLD films deposited at substrate temperature Ts = 25°C and high N2 partial pressure have the highest N content (fN) and polymerlike structure, accompanied by large band gap (Eg) and low electrical conductivity (σroom). The rise in Ts lowers fN and induces graphitization of the film structure, so Eg reduces and σroom increases. IBD (with and without N2+ assist) films are graphitic. Higher Ts further enhances the graphitization of the film structure, such that the conduction and valence bands overlap, and σroom approaches to that of graphite. No evidence was found to show successful formation of the hypothetical β-C3N4 phase in the films.

scholarly journals Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 508 ◽  
Author(s):  
Stanislav Tiagulskyi ◽  
Roman Yatskiv ◽  
Hana Faitová ◽  
Šárka Kučerová ◽  
David Roesel ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Zno Nanorods ◽  
Carrier Injection ◽  
Ion Beam Lithography ◽  
Current Voltage ◽  
P Type ◽  
Surface Leakage

We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by focused ion beam lithography. Electrical properties of single nanorod heterojunctions are measured with a nanoprobe in the vacuum chamber of a scanning electron microscope. The focused ion beam lithography provides a uniform nucleation of ZnO, which results in a uniform growth of ZnO nanorods. The specific configuration of the interface between the ZnO nanorods and GaN substrate created by the focused ion beam suppresses the surface leakage current and improves the current-voltage characteristics. Further improvement of the electrical characteristics is achieved by annealing of the structures in nitrogen, which limits the defect-mediated leakage current and increases the carrier injection efficiency.

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