Focused ion beam processes for high-Tc superconductors

1988 ◽  
Vol 6 (3) ◽  
pp. 900 ◽  
Author(s):  
S. Matsui
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
High Tc Superconductors ◽  
High Tc

Focused ion-beam modification and patterning of high-Tc superconductors

1990 ◽  
Author(s):  
Lloyd R. Harriott ◽  
P. A. Polakos ◽  
C. E. Rice ◽  
Peter L. Gammel ◽  
William P. Robinson ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
High Tc Superconductors ◽  
High Tc ◽  
Ion Beam Modification

scholarly journals Effect of Gallium Focused Ion Beam Irradiation on Properties of YBa2Cu3Ox/La0.67Sr0.33MnO3 Heterostructures

2011 ◽  
Vol 62 (2) ◽  
pp. 109-113 ◽  
Author(s):  
Vladimír Štrbík ◽  
Štefan Beňačka ◽  
Štefan Gaži ◽  
Vasilij Šmatko ◽  
Štefan Chromik ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Weak Link ◽  
Ion Beam ◽  
Superconducting Properties ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Film Properties ◽  
High Tc ◽  
Nanometer Size ◽  
Fib Patterning

Effect of Gallium Focused Ion Beam Irradiation on Properties of YBa2Cu3Ox/La0.67Sr0.33MnO3 Heterostructures We present initial investigation of the superconductor-ferromagnet-superconductor (SFS) heterostructures of nanometer dimensions prepared by the gallium focused ion beam (FIB) technology. The SFS heterostructures were realized on the basis of high-Tc superconducting YBa2Cu3Ox and ferromagnetic La0.67Sr0.33MnO3 thin films. SFS weak link junctions require dimensions of the weak link connection in the range of nanometer size realizable by FIB patterning. On the other side the gallium focused ion beam might bring about unacceptable degradation of the superconducting as well as ferromagnetic thin film properties. The presented results show that FIB offers a suitable procedure for realization of nanometer size devices but some degradation of the ferromagnetic and superconducting properties was observed. Solution of this problem will be achieved in the next stage of our investigations.

scholarly journals High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: βL optimisation

1994 ◽  
Vol 235-240 ◽  
pp. 3353-3354
Author(s):  
R.P.J. IJsselesteijn ◽  
J.W.M. Hilgenkamp ◽  
D. Veldhuis ◽  
J. Flokstra ◽  
H. Rogalla
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
High Tc

High-Tc Vortex Flow Transistors with Focused Ion Beam Channels

1995 ◽  
pp. 1163-1166
Author(s):  
Kazunori Miyahara ◽  
Koji Tsuru ◽  
Shugo Kubo ◽  
Minoru Suzuki
Keyword(s):  
Vortex Flow ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Tc

A low temperature focused ion beam system: Application to in situ processing of high Tc superconducting devices

1996 ◽  
Vol 67 (2) ◽  
pp. 446-450 ◽  
Author(s):  
G. Ben Assayag ◽  
J. Gierack ◽  
S. Flament ◽  
C. Dolabdjian ◽  
F. Gire ◽  
...  
Keyword(s):  
Low Temperature ◽  
System Application ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Superconducting Devices ◽  
High Tc ◽  
Beam System ◽  
In Situ Processing

The many faces of STEM in materials science

1991 ◽  
Vol 49 ◽  
pp. 440-441
Author(s):  
John Silcox
Keyword(s):  
Materials Science ◽  
Auger Spectroscopy ◽  
Dark Field ◽  
High Tc Superconductors ◽  
High Tc ◽  
Acoustic Environment ◽  
Electromagnetic Vibration ◽  
The Many ◽  
Serial Mode

Determination of the microstructure and microchemistry of small features often provides the insight needed for the understanding of processes in real materials. In many cases, it is not adequate to use microscopy alone. Microdiffraction and microspectroscopic information such as EELS, X-ray microprobe analysis and Auger spectroscopy can all contribute vital parts of the picture. For a number of reasons, dedicated STEM offers considerable promise as a quantitative instrument. In this paper, we review progress towards effective quantitative use of STEM with illustrations drawn from studies of high Tc superconductors, compound semiconductors and metallization of H-terminated silicon.Intrinsically, STEM is a quantitative instrument. Images are acquired directly by detectors in serial mode which is particularly convenient for digital image acquisition, control and display. The VG HB501A at Cornell has been installed in a particularly stable electromagnetic, vibration and acoustic environment. Care has been paid to achieving UHV conditions (i.e., 10-10 Torr). Finally, it has been interfaced with a VAX 3200 work station by Kirkland. This permits, for example, the acquisition of bright field (or energy loss) images and dark field images simultaneously as quantitative arrays in perfect registration.

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