A low temperature focused ion beam system: Application to in situ processing of high Tc superconducting devices

1996 ◽  
Vol 67 (2) ◽  
pp. 446-450 ◽  
Author(s):  
G. Ben Assayag ◽  
J. Gierack ◽  
S. Flament ◽  
C. Dolabdjian ◽  
F. Gire ◽  
...  
Keyword(s):  
Low Temperature ◽  
System Application ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Superconducting Devices ◽  
High Tc ◽  
Beam System ◽  
In Situ Processing

Investigation on the Corrosion of Cu Metallization in the Focused Ion Beam System due to a low I2 Background

1999 ◽  
Author(s):  
H. J. Bender ◽  
S. Jin ◽  
I. Vervoort ◽  
Y. Lantasov
Keyword(s):  
Structural Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Long Term Memory ◽  
Term Memory ◽  
Cu Metallization ◽  
Beam System ◽  
Cu Corrosion

Abstract The corrosion effect of an I2 background during focused ion beam (FIB) analysis of Cu-metallization structures is investigated. In-situ Cu corrosion in the FIB system can occur even if the I2 gas has not been used anymore in the last 24 h before the loading of the Cu sample in the system including several vents and pump-downs of the chamber in that period. Hence the I2 can have a long-term memory effect and is not compatible with FIB analysis or modification of devices with Cu metallization. Compositional and structural analysis shows that the reaction product is CuI.

CAD - Less Blind Navigation in Focused Ion Beam System

2005 ◽  
Author(s):  
Valery Ray ◽  
Chris Gerlinsky
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Optical Microscope ◽  
Specific System ◽  
Optical Scanning ◽  
Beam System ◽  
Traditional Approaches ◽  
Proprietary System

Abstract Traditional approaches to navigation in focused ion beam (FIB) circuit edit include blind CAD navigation based on GDSII data from the manufacturer and navigation assisted by the in-situ optical microscope (OM). These approaches are difficult to apply in security audit and reverse engineering fields, where CAD data are unavailable and objects of interest are either too small, or located in an array that is too dense for imaging by in-situ OM. To address this issue, this article presents a methodology which is based on establishing a chip-specific system of coordinates and determination of precise locations of the objects of interest within the device. The work was performed on a Vectra 986 FIB system from FEI Company and a proprietary system for optical scanning of semiconductor devices. Auxiliary techniques allowing enhancement of navigational accuracy, developed for this application, are equally applicable to the general navigation procedures during generic FIB circuit modification.

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

Metallic Nanoneedles Arrays for TEM Sample Preparation “Lift-Out”

2012 ◽  
Author(s):  
Romaneh Jalilian ◽  
David Mudd ◽  
Neil Torrez ◽  
Jose Rivera ◽  
Mehdi M. Yazdanpanah ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Electron Microscope ◽  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam System ◽  
Transmission Electron ◽  
Nanoneedle Array ◽  
Superior Mechanical Properties ◽  
And Performance

Abstract The sample preparation for transmission electron microscope can be done using a method known as "lift-out". This paper demonstrates a method of using a silver-gallium nanoneedle array for a quicker sharpening process of tungsten probes with better sample viewing, covering the fabrication steps and performance of needle-tipped probes for lift-out process. First, an array of high aspect ratio silver-gallium nanoneedles was fabricated and coated to improve their conductivity and strength. Then, the nanoneedles were welded to a regular tungsten probe in the focused ion beam system at the desired angle, and used as a sharp probe for lift-out. The paper demonstrates the superior mechanical properties of crystalline silver-gallium metallic nanoneedles. Finally, a weldless lift-out process is described whereby a nano-fork gripper was fabricated by attaching two nanoneedles to a tungsten probe.

Investigations of Leakage Paths in Sub-0.35μm DRAM Products Using Advanced Focused Ion Beam Techniques

1998 ◽  
Author(s):  
H. Lorenz ◽  
C. Engel
Keyword(s):  
Focused Ion Beam ◽  
Cell Function ◽  
Dielectric Breakdown ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Floating Gate ◽  
Leakage Path ◽  
Contrast Technique ◽  
Voltage Contrast

Abstract Due to the continuously decreasing cell size of DRAMs and concomitantly diminishing thickness of some insulating layers new failure mechanisms appear which until now had no significance for the cell function. For example high resistance leakage paths between closely spaced conductors can lead to retention problems. These are hard to detect by electrical characterization in a memory tester because the involved currents are in the range of pA. To analyze these failures we exploit the very sensitive passive voltage contrast of the Focused Ion Beam Microscope (FIB). The voltage contrast can further be enhanced by in-situ FIB preparations to obtain detailed information about the failure mechanism. The first part of this paper describes a method to detect a leakage path between a borderless contact on n-diffusion and an adjacent floating gate by passive voltage contrast achieved after FIB circuit modification. In the second part we will demonstrate the localization of a DRAM trench dielectric breakdown. In this case the FIB passive voltage contrast technique is not limited to the localization of the failing trench. We can also obtain the depth of the leakage path by selective insitu etching with XeF2 stopped immediately after a voltage contrast change.

FIB Micromachining and Nano-Structure Fabrication

1999 ◽  
Author(s):  
Raymond A. Lee ◽  
Patrick J. Wolpert
Keyword(s):  
High Precision ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Biological Applications ◽  
Optical Lens ◽  
Nano Structure ◽  
Beam System ◽  
Afm Tips ◽  
Established Technique ◽  
Made In

Abstract FIB Micromachining has long been an established technique, but until recently it has been overshadowed by the more mainstream semiconductor application of the Focused Ion Beam system. Nano- Structure fabrication using the FIB system has become more popular recently due to several factors. The need for sub-micron structures have grown significantly due to a need for enhanced optical and biological applications. Another reason for the growth in micromachining is the improvement made in the ability of FIB systems to produce geometric shapes with high precision. With the latest high-end FIB systems, it is possible to produce microstructures with tens of nano-meters of precision. Optical lens, AFM tips, and nano-apertures are all part of the growing application for FIB Micromachining. This paper will discuss the ability and limitations of the FIB system and some possible application for FIB Micromachining.

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