Electron beam induced surface nucleation and low-temperature decomposition of metal carbonyls

1988 ◽  
Vol 6 (5) ◽  
pp. 1557 ◽  
Author(s):  
R. R. Kunz
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Metal Carbonyls ◽  
Surface Nucleation ◽  
Temperature Decomposition

Superconducting Effects in Rapidly Quenched Materials Formed by Ion and Laser Bombardment

1981 ◽  
Vol 4 ◽  
Author(s):  
Bernd Stritzker
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Electron Beam Irradiation ◽  
Pulsed Laser ◽  
Ion Bombardment ◽  
Heavy Ion ◽  
Superconducting Properties ◽  
Beam Irradiation ◽  
Metastable Alloys ◽  
Vapor Quenching

ABSTRACTThe application of low temperature ion bombardment and pulsed laser or electron beam irradiation for the production of rapidly quenched superconducting alloys is described and compared with other more conventionally used non-equilibrium techniques. The comparison is based on the identification of the metastable phases produced by their specific electrical and superconducting properties. It is concluded that low temperature heavy ion bombardment is comparable with vapor quenching whereas laser quenching yields results similar to liquid quenching. Finally, the interesting superconducting properties of these rapidly quenched metastable alloys are discussed.

Low Temperature Deposited High Quality ITO Films Prepared by E-Beam Evaporation

1990 ◽  
Vol 187 ◽  
Author(s):  
C. S. Chang ◽  
J. C. Wang ◽  
L. C. Kuo
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Optimal Condition ◽  
Deposition Rate ◽  
Oxygen Pressure ◽  
Electron Beam Evaporation ◽  
Film Properties ◽  
High Quality ◽  
Ito Films

AbstractAn electron beam evaporation method has been used to prepare tin doped indium oxide (ITO) films with 95 wt.% In2O3 and 5 wt.% SnO2 in an oxygen atmosphere. It was found that the deposition rate and oxygen pressure strongly influence the film properties when the substrate temperature was lower than 200°C. In an optimal condition, highly transparent (transmittance ˜ 90% at wavelength 570 nm) and conductive (resistivity – 3×10−4Ω-cm) films of thickness around 2000 Å at substrate temperature as low as 180°C can be obtained.

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