B4C and B6Si samples have been irradiated by using swift heavy ions and high intense electron beam. Ion irradiation of the samples was carried at the different electron fluences [Formula: see text], [Formula: see text] and [Formula: see text] cm[Formula: see text] ion/cm2, and energy of ions flux 167 MeV. Also, the samples were irradiated with high energy electron beams at the linear electronic accelerator at different electron fluencies up to [Formula: see text] cm[Formula: see text] and energy of electron beams 2.5 MeV and current density of electron beams [Formula: see text]s. The unirradiation and irradiation of the thermodynamic kinetics of samples at low-temperature change with a differential mechanism. In the DSC curves, at the low temperature for unirradiation and irradiation, boron carbide and boron silicide samples do not undergo phase transition. But at the [Formula: see text] K temperature range, the thermodynamic mechanism of ions and electron beam irradiation are very difficult and measuring the temperature of conductivity, thermal conductivity, calibration factor, specific heat capacity becomes more complicated.