Production of focused, low-energy, hydrogen-ion beams using a Colutron ion source

1988 ◽  
Vol 6 (1) ◽  
pp. 485 ◽  
Author(s):  
Bruce L. Cain
Keyword(s):  
Ion Beams ◽  
Ion Source ◽  
Low Energy ◽  
Hydrogen Ion

scholarly journals A CW radiofrequency ion source for production of negative hydrogen ion beams for cyclotrons

2015 ◽  
Author(s):  
T. Kalvas ◽  
O. Tarvainen ◽  
J. Komppula ◽  
H. Koivisto ◽  
J. Tuunanen ◽  
...  
Keyword(s):  
Ion Beams ◽  
Ion Source ◽  
Hydrogen Ion ◽  
Negative Hydrogen Ion

Low Energy Implantation of Boron with Decaborane Ions

2000 ◽  
Vol 610 ◽  
Author(s):  
Maria A. Albano ◽  
Vijay Babaram ◽  
John M. Poate ◽  
Marek Sosnowski ◽  
Dale C. Jacobson
Keyword(s):  
Ion Beam ◽  
Molecular Ions ◽  
Ion Beams ◽  
Ion Source ◽  
Low Energy ◽  
Beam Deflection ◽  
Nuclear Reaction Analysis ◽  
Low Energies ◽  
Beam Currents ◽  
P Type

AbstractFormation of p-type shallow junctions for future generations of Si devices will require ion implantation of B at very low energies (< 1 keV). An alternative to implantation of monomer ions at very low energy is implantation of large molecular ions at a higher energy. In an ion beam of decaborane (B10H14) each of the B atoms carries only 9% of the ion kinetic energy. We have examined ionization properties of decaborane and built an experimental ion source and an implantation apparatus with magnetic mass analysis. Analyzed decaborane ion beams with energies from 2 to 10 keV and beam currents of several microamperes were obtained. Si samples were implanted with decaborane ions and the implanted dose measured by current integration was compared with B content obtained by nuclear reaction analysis. Experiments with electrostatic beam deflection show that the large ions survive the transport in the implanter environment and that neutralization is negligible. During implantation, the retained B dose is reduced in comparison with the nominal implanted dose due to sputtering. Dose loss is greater at 200 eV compared to 500 eV. The properties of decaborane ion beams and the prospects of using them for shallow implantation of B into Si are discussed.

Development of a pepper-pot emittance meter for diagnostics of low-energy multiply charged heavy ion beams extracted from an ECR ion source

2016 ◽  
Vol 87 (2) ◽  
pp. 02B920 ◽  
Author(s):  
T. Nagatomo ◽  
V. Tzoganis ◽  
M. Kase ◽  
O. Kamigaito ◽  
T. Nakagawa
Keyword(s):  
Heavy Ion ◽  
Ion Beams ◽  
Ion Source ◽  
Low Energy ◽  
Ecr Ion Source ◽  
Multiply Charged

Production of low energy, high intensity metal ion beams by means of a laser ion source

2002 ◽  
Vol 73 (2) ◽  
pp. 650-653 ◽  
Author(s):  
S. Gammino ◽  
L. Torrisi ◽  
L. Andò ◽  
G. Ciavola ◽  
L. Celona ◽  
...  
Keyword(s):  
High Intensity ◽  
Metal Ion ◽  
Ion Beams ◽  
Ion Source ◽  
Low Energy ◽  
Laser Ion Source
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