Low energy solid intense ion beams extracted by electron beam evaporation ion source for material modifications

1998 ◽  
Vol 69 (7) ◽  
pp. 2644-2646
Author(s):  
Y. C. Feng ◽  
S. P. Wong
Keyword(s):  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Ion Beams ◽  
Ion Source ◽  
Low Energy

A compact, versatile low-energy electron beam ion source

2014 ◽  
Vol 85 (2) ◽  
pp. 02B703 ◽  
Author(s):  
G. Zschornack ◽  
J. König ◽  
M. Schmidt ◽  
A. Thorn
Keyword(s):  
Electron Beam ◽  
Ion Source ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron

New improvements on the Kansas State University cryogenic electron beam ion source, a user facility for low energy, highly charged ions

2000 ◽  
Vol 71 (2) ◽  
pp. 902-905 ◽  
Author(s):  
M. P. Stockli ◽  
K. Carnes ◽  
C. L. Cocke ◽  
B. D. DePaola ◽  
T. Ehrenreich ◽  
...  
Keyword(s):  
Electron Beam ◽  
Ion Source ◽  
Highly Charged Ions ◽  
Low Energy ◽  
State University ◽  
User Facility ◽  
Kansas State University ◽  
Charged Ions

Low Energy Ion Etching of GaAs and Si Using a New Type of Ion Source Excited by an Electron Beam

1987 ◽  
Author(s):  
Jin-Zhong YU ◽  
Tamio HARA ◽  
Takashi YOSHINAGA ◽  
Manabu HAMAGAKI ◽  
Yoshinobu AOYAGI ◽  
...  
Keyword(s):  
Electron Beam ◽  
Ion Source ◽  
Low Energy ◽  
Ion Etching ◽  
New Type

Low Energy Implantation of Boron with Decaborane Ions

2000 ◽  
Vol 610 ◽  
Author(s):  
Maria A. Albano ◽  
Vijay Babaram ◽  
John M. Poate ◽  
Marek Sosnowski ◽  
Dale C. Jacobson
Keyword(s):  
Ion Beam ◽  
Molecular Ions ◽  
Ion Beams ◽  
Ion Source ◽  
Low Energy ◽  
Beam Deflection ◽  
Nuclear Reaction Analysis ◽  
Low Energies ◽  
Beam Currents ◽  
P Type

AbstractFormation of p-type shallow junctions for future generations of Si devices will require ion implantation of B at very low energies (< 1 keV). An alternative to implantation of monomer ions at very low energy is implantation of large molecular ions at a higher energy. In an ion beam of decaborane (B10H14) each of the B atoms carries only 9% of the ion kinetic energy. We have examined ionization properties of decaborane and built an experimental ion source and an implantation apparatus with magnetic mass analysis. Analyzed decaborane ion beams with energies from 2 to 10 keV and beam currents of several microamperes were obtained. Si samples were implanted with decaborane ions and the implanted dose measured by current integration was compared with B content obtained by nuclear reaction analysis. Experiments with electrostatic beam deflection show that the large ions survive the transport in the implanter environment and that neutralization is negligible. During implantation, the retained B dose is reduced in comparison with the nominal implanted dose due to sputtering. Dose loss is greater at 200 eV compared to 500 eV. The properties of decaborane ion beams and the prospects of using them for shallow implantation of B into Si are discussed.

Investigations of the emittance and brightness of ion beams from an electron beam ion source of the Dresden EBIS type

2010 ◽  
Vol 81 (2) ◽  
pp. 023303 ◽  
Author(s):  
Alexandra Silze ◽  
Erik Ritter ◽  
Günter Zschornack ◽  
Andreas Schwan ◽  
Falk Ullmann
Keyword(s):  
Electron Beam ◽  
Ion Beams ◽  
Ion Source
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