Very high voltage (500 kV) electron beam lithography for thick resists and high resolution

1987 ◽  
Vol 5 (1) ◽  
pp. 120 ◽  
Author(s):  
G. A. C. Jones
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
High Voltage ◽  
Electron Beam Lithography ◽  
Very High

High resolution spin-on electron beam lithography resist with exceptional dry etching resistance

2015 ◽  
Vol 1 (1) ◽  
pp. 13-19 ◽  
Author(s):  
G. Grenci ◽  
E. Zanchetta ◽  
A. Pozzato ◽  
G. Della Giustina ◽  
G. Brusatin ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Dry Etching

High resolution electron beam lithography on CaF2

1984 ◽  
Vol 44 (4) ◽  
pp. 468-469 ◽  
Author(s):  
P. M. Mankiewich ◽  
H. G. Craighead ◽  
T. R. Harrison ◽  
A. H. Dayem
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Resolution Electron

Characterization of High Resolution Resists and Metal Shims by Scanning Probe Microscopy

2000 ◽  
Vol 6 (2) ◽  
pp. 129-136 ◽  
Author(s):  
B. A. Sexton ◽  
R. J. Marnock
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Scanning Probe Microscopy ◽  
Electron Beam Lithography ◽  
Scanning Probe ◽  
Feedback Process ◽  
Probe Microscope ◽  
Etched Silicon ◽  
Micro Patterns

Technologies such as compact disc (CD) manufacturing, hologram embossing, and security printing rely on the reproduction of micro-patterns generated on surfaces by optical or electron-beam lithographic writing onto electron-beam or photoresists. The periodicity of such patterns varies from sub-micron to several microns, with depths up to 0.5 μm. The scanning probe microscope (SPM) is becoming a routine tool for analysis of these micro-patterns, to check on depths and lateral dimensions of features. Direct scanning of resist-covered plates is now possible, without damage, using resonant low-contact force SPM with etched silicon cantilevers. Metal shims produced from the master resist plates can also be scanned and checked for defects prior to production of embossed foils. The present article discusses examples of the use of a Digital Instruments 3100 microscope in analysis of production electron-beam lithography plates with a 0.5 μm resist thickness. We also examine features of nickel replicas (father and mother shims) produced by electroforming from the original plate. With SPM measurements of the development profile of a particular plate, corrections can be made to exposures and development times during production to correct errors. An example is given of such a feedback process.

High Resolution Resists for Next Generation Lithography: The Nanocomposite Approach

2000 ◽  
Vol 636 ◽  
Author(s):  
Kenneth E. Gonsalves ◽  
Hengpeng Wu ◽  
Yongqi Hu ◽  
Lhadi Merhari
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Ion Beam ◽  
Proximity Effects ◽  
Next Generation ◽  
Polyhedral Oligosilsesquioxane ◽  
Ion Beam Lithography ◽  
New Class ◽  
Next Generation Lithography

AbstractThe SIA roadmap predicts mass production of sub-100 nm resolution circuits by 2006. This not only imposes major constraints on next generation lithographic tools but also requires that new resists capable of accommodating such a high resolution be synthesized and developed concurrently. Except for ion beam lithography, DUV, X-ray, and in particular electron beam lithography suffer significantly from proximity effects, leading to severe degradation of resolution in classical resists. We report a new class of resists based on organic/inorganic nanocomposites having a structure that reduces the proximity effects. Synthetic routes are described for a ZEP520®nano-SiO2 resist where 47nm wide lines have been written with a 40 nm diameter, 20 keV electron beam at no sensitivity cost. Other resist systems based on polyhedral oligosilsesquioxane copolymerized with MMA, TBMA, MMA and a proprietary PAG are also presented. These nanocomposite resists suitable for DUV and electron beam lithography show enhancement in both contrast and RIE resistance in oxygen. Tentative mechanisms responsible for proximity effect reduction are also discussed.

Spot Electron-Beam Lithography as a Novel Method of High Resolution Pattern Nanofabrication

2014 ◽  
Vol 215 ◽  
pp. 459-461
Author(s):  
Alexander S. Samardak ◽  
Margarita V. Anisimova ◽  
Alexey V. Ognev ◽  
Vadim Yu. Samardak ◽  
Liudmila A. Chebotkevich
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Electron Beam Lithography ◽  
The Novel ◽  
Practical Applications ◽  
Novel Method ◽  
20 Nm ◽  
Scanning Electron

We present a novel method of pattern nanofabrication with high resolution and small shape defects using the traditional electron-beam lithography (EBL) or only a scanning electron microscope (SEM). Our method of Spot EBL is extremely fast, highly scalable on big areas, capable of sub-20 nm resolution and fabrication of polymer patterns with complicated shapes. We show the nanostructure images fabricated by Spot EBL and propose practical applications of the novel method.

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