Impurity scattering limited momentum relaxation time in a quantum well wire

1986 ◽  
Vol 4 (2) ◽  
pp. 453 ◽  
Author(s):  
Jerry W. Brown
Keyword(s):  
Relaxation Time ◽  
Quantum Well ◽  
Impurity Scattering ◽  
Momentum Relaxation Time ◽  
Quantum Well Wire ◽  
Momentum Relaxation

Electron Mobility Model for Tensile Strained-Si(101)

2014 ◽  
Vol 986-987 ◽  
pp. 131-135
Author(s):  
Jian An Wang ◽  
Meng Nan ◽  
Hui Yong Hu ◽  
He Ming Zhang
Keyword(s):  
Relaxation Time ◽  
Electron Mobility ◽  
Acoustic Phonon ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Mobility Model ◽  
Strained Si ◽  
Average Momentum ◽  
Intervalley Scattering ◽  
Momentum Relaxation

Nowadays, the strained-Si technology has been used to maintain the momentum of semiconductor scaling due to its enhancement performance result from the higher mobility. In this paper, the influence of ionizing impurity scattering, acoustic phonon scattering and intervalley scattering to strained-Si (101) material is discussed.In addition, a calculation of the electron mobility in Strained-Si (101) material is made using the average momentum relaxation time method described in Ref [1]. The results show that the electron mobility increases gradually for both [001] and [100] orientations while for [010] orientation increases rapidly with the increasing Ge fraction x.[1]

Implicit versus explicit momentum relaxation time solution for semiconductor nanowires

2015 ◽  
Vol 118 (2) ◽  
pp. 024504 ◽  
Author(s):  
E. G. Marin ◽  
F. G. Ruiz ◽  
A. Godoy ◽  
I. M. Tienda-Luna ◽  
F. Gámiz
Keyword(s):  
Relaxation Time ◽  
Semiconductor Nanowires ◽  
Time Solution ◽  
Momentum Relaxation Time ◽  
Momentum Relaxation

scholarly journals The scattering time of electrons in a GaAs/InGaAs/GaAs quantum well including temperature and exchange-correlation effects

2020 ◽  
Vol 3 (3) ◽  
Author(s):  
Truong Van Tuan ◽  
Nguyen Quoc Khanh ◽  
Vo Van Tai
Keyword(s):  
Surface Roughness ◽  
Relaxation Time ◽  
Quantum Well ◽  
Impurity Scattering ◽  
Correlation Effects ◽  
Charged Impurity ◽  
Exchange Correlation ◽  
Local Field Correction ◽  
Quantum Well Width ◽  
Charged Impurity Scattering

The ratio of the scattering and single-particle relaxation time of a quasi-two-dimensional electron gas (Q2DEG) in a finite lattice-mismatched GaAs/InGaAs/GaAs quantum well was investigate at zero and finite temperatures, taking into account the exchange-correlation effects via a local-field correction with three approximations for the LFC, G = 0, GH, and GGA. We studied the dependence of the surface roughness, roughness-induced piezoelectric, remote and homogenous background charged impurity scattering on the carrier density and quantum well width. In the case of zero temperature and Hubbard local-field correction our results reduced to those of different theoretical calculations. At low density, the exchange-correlation effects depend strongly on the ratio τt/τs. While at high density many-body effects due to exchange and correlation considerably modified the ratio of the scattering and single-particle relaxation time. We found that, for densities and temperatures considered T = 0,3TF in this study, the temperature affected weakly on the time ratio for four scatterings. Furthermore, with the change of quantum well width, the effect of LFC and temperatures act on the ratio τt/τs are negligible for the roughness-induced piezoelectric and remote charged impurity scattering, and are notable for the surface roughness and homogenous background charged impurity scattering.

scholarly journals Analysis of electron momentum relaxation time in fused silica using a tightly focused femtosecond laser pulse

2014 ◽  
Vol 63 (7) ◽  
pp. 074209
Author(s):  
Bian Hua-Dong ◽  
Dai Ye ◽  
Ye Jun-Yi ◽  
Song Juan ◽  
Yan Xiao-Na ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Laser Pulse ◽  
Femtosecond Laser ◽  
Femtosecond Laser Pulse ◽  
Fused Silica ◽  
Electron Momentum ◽  
Momentum Relaxation Time ◽  
Momentum Relaxation

Terahertz Resonances in the Dielectric Response Due to Second Order Phonons in a GaSe Crystal

2006 ◽  
Vol 935 ◽  
Author(s):  
Baolong L. Yu ◽  
Hakan Altan ◽  
Fanang Zeng ◽  
Vladimir Kartazayev ◽  
Robert Alfano ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Dielectric Response ◽  
Plasma Frequency ◽  
Second Order ◽  
Terahertz Time Domain Spectroscopy ◽  
Average Momentum ◽  
Momentum Relaxation Time ◽  
Momentum Relaxation ◽  
The Difference ◽  
Thz Absorption

ABSTRACTThe dielectric function and momentum relaxation time of carriers for a single-crystal GaSe were investigated using terahertz time-domain spectroscopy over the frequency range from 0.4 to 2.4 THz. The key parameters determined from THz data using the Drude model are: the plasma frequency ωp = 6.1 ± 0.5 THz, the average momentum relaxation time <τ> = 51 +± 6 fs for electrons. The THz absorption spectrum showed resonance structures attributed to the difference frequency combinations associated with acoustical and optical phonons. This paper has already been published, see B. L. Yu, F. Zeng, V. Kartazayev, and R. R. Alfano, “Terahertz studies of the dielectric response of and second order phonons in a GaSe crystal,” Appl. Phys. Lett. 86, 182104 (2005).

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