Optical Mixing Due to Nonlinearities Associated with the Carrier-Momentum Relaxation Time in a Magnetic Field in Semiconductors

1971 ◽  
Vol 3 (6) ◽  
pp. 2083-2086 ◽  
Author(s):  
B. S. Krishnamurthy ◽  
V. V. Paranjape
Keyword(s):  
Magnetic Field ◽  
Relaxation Time ◽  
Momentum Relaxation Time ◽  
Optical Mixing ◽  
Momentum Relaxation

DEPHASING IN PRESENCE OF A MAGNETIC FIELD

2007 ◽  
Vol 06 (03n04) ◽  
pp. 261-264 ◽  
Author(s):  
A. V. GERMANENKO ◽  
V. A. LARIONOVA ◽  
I. V. GORNYI ◽  
G. M. MINKOV
Keyword(s):  
Magnetic Field ◽  
Relaxation Time ◽  
Relaxation Rate ◽  
Negative Magnetoresistance ◽  
Phase Relaxation ◽  
Quasi Momentum ◽  
Fitting Procedure ◽  
Electron Interference ◽  
Momentum Relaxation ◽  
The Magnetic Field

Effect of the magnetic field on the rate of phase breaking is studied. It is shown that the magnetic field resulting in the decrease of phase relaxation rate [Formula: see text] makes the negative magnetoresistance due to suppression of the electron interference to be smoother in shape and lower in magnitude than that found with constant [Formula: see text]-value. Nevertheless our analysis shows that experimental magnetoconductance curves can be well fitted by the Hikami–Larkin–Nagaoka expression.1 The fitting procedure gives the value of τ/τϕ, where τ is the quasi-momentum relaxation time, which is close to the value of τ/τϕ(B = 0) with an accuracy of 25% or better when the temperature varies within the range from 0.4 to 10 K. The value of the prefactor α found from this procedure lies within the interval 0.9–1.2.

Implicit versus explicit momentum relaxation time solution for semiconductor nanowires

2015 ◽  
Vol 118 (2) ◽  
pp. 024504 ◽  
Author(s):  
E. G. Marin ◽  
F. G. Ruiz ◽  
A. Godoy ◽  
I. M. Tienda-Luna ◽  
F. Gámiz
Keyword(s):  
Relaxation Time ◽  
Semiconductor Nanowires ◽  
Time Solution ◽  
Momentum Relaxation Time ◽  
Momentum Relaxation

scholarly journals Analysis of electron momentum relaxation time in fused silica using a tightly focused femtosecond laser pulse

2014 ◽  
Vol 63 (7) ◽  
pp. 074209
Author(s):  
Bian Hua-Dong ◽  
Dai Ye ◽  
Ye Jun-Yi ◽  
Song Juan ◽  
Yan Xiao-Na ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Laser Pulse ◽  
Femtosecond Laser ◽  
Femtosecond Laser Pulse ◽  
Fused Silica ◽  
Electron Momentum ◽  
Momentum Relaxation Time ◽  
Momentum Relaxation

Terahertz Resonances in the Dielectric Response Due to Second Order Phonons in a GaSe Crystal

2006 ◽  
Vol 935 ◽  
Author(s):  
Baolong L. Yu ◽  
Hakan Altan ◽  
Fanang Zeng ◽  
Vladimir Kartazayev ◽  
Robert Alfano ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Dielectric Response ◽  
Plasma Frequency ◽  
Second Order ◽  
Terahertz Time Domain Spectroscopy ◽  
Average Momentum ◽  
Momentum Relaxation Time ◽  
Momentum Relaxation ◽  
The Difference ◽  
Thz Absorption

ABSTRACTThe dielectric function and momentum relaxation time of carriers for a single-crystal GaSe were investigated using terahertz time-domain spectroscopy over the frequency range from 0.4 to 2.4 THz. The key parameters determined from THz data using the Drude model are: the plasma frequency ωp = 6.1 ± 0.5 THz, the average momentum relaxation time <τ> = 51 +± 6 fs for electrons. The THz absorption spectrum showed resonance structures attributed to the difference frequency combinations associated with acoustical and optical phonons. This paper has already been published, see B. L. Yu, F. Zeng, V. Kartazayev, and R. R. Alfano, “Terahertz studies of the dielectric response of and second order phonons in a GaSe crystal,” Appl. Phys. Lett. 86, 182104 (2005).

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