Implicit versus explicit momentum relaxation time solution for semiconductor nanowires

2015 ◽  
Vol 118 (2) ◽  
pp. 024504 ◽  
Author(s):  
E. G. Marin ◽  
F. G. Ruiz ◽  
A. Godoy ◽  
I. M. Tienda-Luna ◽  
F. Gámiz
Keyword(s):  
Relaxation Time ◽  
Semiconductor Nanowires ◽  
Time Solution ◽  
Momentum Relaxation Time ◽  
Momentum Relaxation

scholarly journals Analysis of electron momentum relaxation time in fused silica using a tightly focused femtosecond laser pulse

2014 ◽  
Vol 63 (7) ◽  
pp. 074209
Author(s):  
Bian Hua-Dong ◽  
Dai Ye ◽  
Ye Jun-Yi ◽  
Song Juan ◽  
Yan Xiao-Na ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Laser Pulse ◽  
Femtosecond Laser ◽  
Femtosecond Laser Pulse ◽  
Fused Silica ◽  
Electron Momentum ◽  
Momentum Relaxation Time ◽  
Momentum Relaxation

Terahertz Resonances in the Dielectric Response Due to Second Order Phonons in a GaSe Crystal

2006 ◽  
Vol 935 ◽  
Author(s):  
Baolong L. Yu ◽  
Hakan Altan ◽  
Fanang Zeng ◽  
Vladimir Kartazayev ◽  
Robert Alfano ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Dielectric Response ◽  
Plasma Frequency ◽  
Second Order ◽  
Terahertz Time Domain Spectroscopy ◽  
Average Momentum ◽  
Momentum Relaxation Time ◽  
Momentum Relaxation ◽  
The Difference ◽  
Thz Absorption

ABSTRACTThe dielectric function and momentum relaxation time of carriers for a single-crystal GaSe were investigated using terahertz time-domain spectroscopy over the frequency range from 0.4 to 2.4 THz. The key parameters determined from THz data using the Drude model are: the plasma frequency ωp = 6.1 ± 0.5 THz, the average momentum relaxation time <τ> = 51 +± 6 fs for electrons. The THz absorption spectrum showed resonance structures attributed to the difference frequency combinations associated with acoustical and optical phonons. This paper has already been published, see B. L. Yu, F. Zeng, V. Kartazayev, and R. R. Alfano, “Terahertz studies of the dielectric response of and second order phonons in a GaSe crystal,” Appl. Phys. Lett. 86, 182104 (2005).

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