Effect of substrate temperature in SiOxNy films deposited by electron cyclotron resonance

1999 ◽  
Vol 17 (4) ◽  
pp. 1263-1268 ◽  
Author(s):  
A. del Prado ◽  
F. L. Martı́nez ◽  
I. Mártil ◽  
G. González-Dı́az ◽  
M. Fernández
Keyword(s):  
Substrate Temperature ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron

Preparation And Characterization Of Carbon Nitride Thin Films By Electron Cyclotron Resonance (Ecr) Sputtering Method

1998 ◽  
Vol 555 ◽  
Author(s):  
Yoshifumi Aoi ◽  
Youji Tani ◽  
Masaaki Hisa ◽  
Eiji Kamijo
Keyword(s):  
Substrate Temperature ◽  
Photoelectron Spectroscopy ◽  
Cyclotron Resonance ◽  
Carbon Nitride ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
X Ray ◽  
Ecr Plasma ◽  
Plasma Sputtering ◽  
Gas Atmosphere

AbstractCrystalline carbon nitride films were deposited by electron cyclotron resonance (ECR) plasma sputtering method using a carbon target and a nitrogen gas atmosphere. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and X-ray diffraction (XRD). Nitrogen content of the deposited film was varied with substrate selfbias potential and substrate temperature. Bonding states of nitrogen and carbon in the deposited filns were different according to the substrate temperature, sp3 C-N bonds were observed for the film deposited at 600 °C. Crystallization of carbon nitride thin film was observed hen the deposition was carried out an elevated substrate temperature.

Anisotropic electron cyclotron resonance etching of tungsten films on GaAs

1994 ◽  
Vol 30 (1) ◽  
pp. 84-85 ◽  
Author(s):  
R.J. Shul ◽  
D.J. Rieger ◽  
C. Constantine ◽  
A.G. Baca ◽  
C. Barratt
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron
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