Effects of substrate temperature and ion incident energy on silicon surface cleaning using a hydrogen plasma excited by electron cyclotron resonance

1993 ◽  
Vol 74 (11) ◽  
pp. 6936-6940 ◽  
Author(s):  
Kenji Nakashima ◽  
Masahiko Ishii ◽  
Tetsuo Hayakawa ◽  
Ichiro Tajima ◽  
Minoru Yamamoto
Keyword(s):  
Substrate Temperature ◽  
Cyclotron Resonance ◽  
Incident Energy ◽  
Silicon Surface ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Electron Cyclotron

Insituinvestigation of silicon surface cleaning and damage by argon electron cyclotron resonance plasmas

1994 ◽  
Vol 64 (10) ◽  
pp. 1233-1235 ◽  
Author(s):  
Y. Z. Hu ◽  
P. P. Buaud ◽  
Y. Wang ◽  
L. Spanos ◽  
E. A. Irene
Keyword(s):  
Cyclotron Resonance ◽  
Silicon Surface ◽  
Electron Cyclotron Resonance ◽  
Surface Cleaning ◽  
Electron Cyclotron

Experimental study of the hot and warm electron populations in an electron cyclotron resonance argon–oxygen–hydrogen plasma

1995 ◽  
Vol 2 (6) ◽  
pp. 2138-2140 ◽  
Author(s):  
R. Friedlein ◽  
S. Herpich ◽  
H. Hiller ◽  
H. Wirth ◽  
G. Zschornack ◽  
...  
Keyword(s):  
Experimental Study ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Electron Cyclotron
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