Hydrogenated amorphous carbon nitride films on Si(100) deposited by direct current saddle-field plasma-enhanced chemical vapor deposition

1999 ◽  
Vol 17 (5) ◽  
pp. 2607-2611 ◽  
Author(s):  
H. K. Jang ◽  
G. Kim ◽  
Y. S. Lee ◽  
S. W. Whangbo ◽  
C. N. Whang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Direct Current ◽  
Vapor Deposition ◽  
Carbon Nitride ◽  
Chemical Vapor ◽  
Hydrogenated Amorphous Carbon ◽  
Amorphous Carbon Nitride ◽  
Hydrogenated Amorphous

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

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