Low energy ion beam etching of CuInSe2 surfaces

1999 ◽  
Vol 17 (1) ◽  
pp. 19-25 ◽  
Author(s):  
K. Otte ◽  
G. Lippold ◽  
F. Frost ◽  
A. Schindler ◽  
F. Bigl ◽  
...  
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Etching

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

2011 ◽  
Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung
Keyword(s):  
Sample Preparation ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Critical Dimension ◽  
Low Energy ◽  
Ex Situ ◽  
Good Image Quality ◽  
Ion Beam Etching ◽  
Device Structures ◽  
Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

Smoothing of polycrystalline Cu(In,Ga)(Se,S)2 thin films by low-energy ion-beam etching

1999 ◽  
Vol 17 (3) ◽  
pp. 793-798 ◽  
Author(s):  
F. Frost ◽  
G. Lippold ◽  
K. Otte ◽  
D. Hirsch ◽  
A. Schindler ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Etching

Using a quartz crystal microbalance for low energy ion beam etching studies

2000 ◽  
Vol 18 (1) ◽  
pp. 232-236 ◽  
Author(s):  
M. F. Doemling ◽  
B. Lin ◽  
N. R. Rueger ◽  
G. S. Oehrlein ◽  
R. A. Haring ◽  
...  
Keyword(s):  
Quartz Crystal Microbalance ◽  
Quartz Crystal ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Etching

The Effects of Low Energy Ion-Beam Milling on the Physical and Electrical Properties of N-GaAs.

1995 ◽  
Vol 396 ◽  
Author(s):  
W.F. Seng ◽  
P.A. Barnes ◽  
M.L. Lovejoy ◽  
L.P. Fu ◽  
G.D. Gilliland ◽  
...  
Keyword(s):  
Ion Beam ◽  
Surface Region ◽  
Low Energy ◽  
Ion Milling ◽  
Ion Beam Etching ◽  
Near Surface ◽  
Contact Metallization ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Modification Of The Surface

AbstractLow energy neutral Ar ion-beam etching of n-GaAs was investigated as a possible “cleaning” procedure prior to contact metallization. The ion-beam source energy was varied between 35 eV and 1200 eV at a fixed current density of 1 mA/cm2. The effects of ion-milling on lightly doped n-GaAs were analyzed electrically by measuring current-voltage (IV) and capacitance-voltage (CV) characteristics of Schottky barriers formed after the ion-milling. The metal semiconductor barriers were prepared immediately following ion-milling without breaking vacuum. Photoluminescence and Rutherford Backscattering (RBS) were used to determine if any physical modification of the surface and near surface region of the ion-milled substrates had occurred.

Surface oxidation of GaAs and AlGaAs in low‐energy Ar/O2reactive ion beam etching

1986 ◽  
Vol 49 (4) ◽  
pp. 204-206 ◽  
Author(s):  
Haruhisa Kinoshita ◽  
Toshimasa Ishida ◽  
Katsuzo Kaminishi
Keyword(s):  
Ion Beam ◽  
Surface Oxidation ◽  
Low Energy ◽  
Ion Beam Etching
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