The Effects of Low Energy Ion-Beam Milling on the Physical and Electrical Properties of N-GaAs.

1995 ◽  
Vol 396 ◽  
Author(s):  
W.F. Seng ◽  
P.A. Barnes ◽  
M.L. Lovejoy ◽  
L.P. Fu ◽  
G.D. Gilliland ◽  
...  
Keyword(s):  
Ion Beam ◽  
Surface Region ◽  
Low Energy ◽  
Ion Milling ◽  
Ion Beam Etching ◽  
Near Surface ◽  
Contact Metallization ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Modification Of The Surface

AbstractLow energy neutral Ar ion-beam etching of n-GaAs was investigated as a possible “cleaning” procedure prior to contact metallization. The ion-beam source energy was varied between 35 eV and 1200 eV at a fixed current density of 1 mA/cm2. The effects of ion-milling on lightly doped n-GaAs were analyzed electrically by measuring current-voltage (IV) and capacitance-voltage (CV) characteristics of Schottky barriers formed after the ion-milling. The metal semiconductor barriers were prepared immediately following ion-milling without breaking vacuum. Photoluminescence and Rutherford Backscattering (RBS) were used to determine if any physical modification of the surface and near surface region of the ion-milled substrates had occurred.

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

2011 ◽  
Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung
Keyword(s):  
Sample Preparation ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Critical Dimension ◽  
Low Energy ◽  
Ex Situ ◽  
Good Image Quality ◽  
Ion Beam Etching ◽  
Device Structures ◽  
Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

scholarly journals Site Specific Three-dimensional Structural Analysis in Tissues and Cells Using Automated DualBeam Slice &View

2007 ◽  
Vol 15 (2) ◽  
pp. 26-31 ◽  
Author(s):  
Ben Lich
Keyword(s):  
Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Surface Region ◽  
Dimensional Structure ◽  
Near Surface ◽  
Imaging Capability ◽  
Fluorescent Markers ◽  
Confocal And Electron Microscopy

DualBeam instruments that combine the imaging capability of scanning electron microscopy (SEM) with the cutting and deposition capability of a focused ion beam (FIB) provide biologists with a powerful tool for investigating three-dimensional structure with nanoscale (1 nm-100 nm) resolution. Ever since Van Leeuwenhoek used the first microscope to describe bacteria more than 300 years ago, microscopy has played a central role in scientists' efforts to understand biological systems. Light microscopy is generally limited to a useful resolution of about a micrometer. More recently the use of confocal and electron microscopy has enabled investigations at higher resolution. Used with fluorescent markers, confocal microscopy can detect and localize molecular scale features, but its imaging resolution is still limited. SEM is capable of nanometer resolution, but is limited to the near surface region of the sample.

Amortization and Recrystallization of 6H-SiC by ion Beam Irradiation

1994 ◽  
Vol 339 ◽  
Author(s):  
V. Heera ◽  
R. Kögler ◽  
W. Skorupa ◽  
J. Stoemenos
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Surface Region ◽  
Ion Beam Irradiation ◽  
Surface Layers ◽  
Near Surface ◽  
Transmission Electron ◽  
Amorphous Surface ◽  
Amorphous Sic

ABSTRACTThe evolution of the damage in the near surface region of single crystalline 6H-SiC generated by 200 keV Ge+ ion implantation at room temperature (RT) was investigated by Rutherford backscattering spectroscopy/chanelling (RBS/C). The threshold dose for amorphization was found to be about 3 · 1014 cm-2, Amorphous surface layers produced with Ge+ ion doses above the threshold were partly annealed by 300 keV Si+ ion beam induced epitaxial crystallization (IBIEC) at a relatively low temperature of 480°C For comparison, temperatures of at least 1450°C are necessary to recrystallize amorphous SiC layers without assisting ion irradiation. The structure and quality of both the amorphous and recrystallized layers were characterized by cross-section transmission electron microscopy (XTEM). Density changes of SiC due to amorphization were measured by step height measurements.

Volatile Evolution from Polymer Materials Induced by Irradiation with Accelerated He++ Ions

2004 ◽  
Vol 851 ◽  
Author(s):  
Julian.J. Murphy ◽  
Christopher.J. Wetteland
Keyword(s):  
Ion Beam ◽  
Surface Region ◽  
Energetic Particles ◽  
Thin Layers ◽  
Polymer Materials ◽  
Particle Radiation ◽  
Chemical Changes ◽  
Near Surface ◽  
Particle Irradiation ◽  
Pass Through

ABSTRACTExperimentally investigating ageing caused by irradiation with energetic particles is very difficult. Radioactive sources can be employed but these are difficult to handle and contaminate the material being irradiated precluding subsequent chemical and physical characterisation. The penetration of energetic particles also tends to be small so any change is localised in the near surface region so only a small amount of material is irradiated. Analysing changes in such thin layers causes a number of problems. To simulate ageing induced by particle radiation polymer samples have been exposed to fast He++ ions in an accelerated ion beam. The ions pass through a 10μm thick window of Havar foil before impacting upon the sample. Volatile species evolved from the materials upon bombardment are contained within the irradiation chamber by the foil window. Analysis of such species is shown to be a highly sensitive probe for investigating chemical changes in the exposed materials. A number of important chemical changes induced in polymer materials have been identified. Trends in the relative rates of volatile evolution have been identified which correlate with chemical changes identified in other radiation experiments. As these experiments are performed at far slower irradiation rates the large acceleration factors used in ion beam irradiation are discussed along with the implications for using ion beams to simulate alpha particle irradiation.

Smoothing of polycrystalline Cu(In,Ga)(Se,S)2 thin films by low-energy ion-beam etching

1999 ◽  
Vol 17 (3) ◽  
pp. 793-798 ◽  
Author(s):  
F. Frost ◽  
G. Lippold ◽  
K. Otte ◽  
D. Hirsch ◽  
A. Schindler ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Etching

Low Energy Ion Beam Modification of High Performance Polymer

1991 ◽  
Vol 236 ◽  
Author(s):  
Hyo-Soo Jeong ◽  
R. C. White
Keyword(s):  
High Performance ◽  
Ion Beam ◽  
Surface Region ◽  
Low Energy ◽  
Chemical Compositions ◽  
Interface Chemistry ◽  
Damage Level ◽  
Ion Beam Modification ◽  
Control Interface ◽  
High Performance Polymer

AbstractIon beam modification of polyimide (PI) by low energy and surface analysis were performed using XPS. The surface chemistry was monitored as a function of ion dose. The results indicate that even low energy ion beam (LEIB) induces a drastic change in chemical compositions on the PI surface, and the modification begins to occur at the onset of beam treatment, contrary to previous observations. Damage level is severely restricted to surface region. It is also proven that LEIB modification is a direct way to control interface chemistry.

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