Influence of residual stress and film thickness on crystallographic orientation in Al thin films deposited by bias sputtering

1998 ◽  
Vol 16 (6) ◽  
pp. 3348-3351 ◽  
Author(s):  
H. M. Choi ◽  
S. K. Choi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Film Thickness ◽  
Crystallographic Orientation

Film thickness effect on texture and residual stress sign transition in sputtered TiN thin films

2017 ◽  
Vol 43 (15) ◽  
pp. 11992-11997 ◽  
Author(s):  
Yeting Xi ◽  
Kewei Gao ◽  
Xiaolu Pang ◽  
Huisheng Yang ◽  
Xiaotao Xiong ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Film Thickness ◽  
Thickness Effect ◽  
Tin Thin Films

Measurements of Residual Stresses in Low-Stress Silicon Nitride Thin Films Using Micro-Rotating Structures

1996 ◽  
Vol 444 ◽  
Author(s):  
Xin Zhang ◽  
Yitshak Zohar ◽  
Tong-Yi Zhang
Keyword(s):  
Thin Films ◽  
Finite Element Method ◽  
Residual Stress ◽  
Finite Element ◽  
Silicon Nitride ◽  
Film Thickness ◽  
Strain Measurement ◽  
Strain Measurements ◽  
Micro Structures ◽  
Gas Ratio

AbstractA variety of rotating micro structures were designed, fabricated and characterized for residual-stress (or strain) measurements in low-stress silicon nitride thin films, deposited by LPCVD on silicon wafers. The sensitivities of the micro structures were calculated by finite element method (FEM) and verified experimentally. The results were further confirmed by utilizing the wafer-curvature method for stress measurements. The size of the structures enables local residual-stress (or strain) measurement. The stress level depends on both the film thickness and the gas ratio and also varies with the location on the wafer.

The cracking and decohesion of thin films

1988 ◽  
Vol 3 (5) ◽  
pp. 1043-1049 ◽  
Author(s):  
A. G. Evans ◽  
M. D. Drory ◽  
M. S. Hu
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Yield Strength ◽  
Film Thickness ◽  
Elastic Properties ◽  
Fracture Resistance ◽  
Critical Values ◽  
Substrate Thickness ◽  
The Status ◽  
Ductile Substrates

The cracking and decohesion of thin films can be characterized by critical values of a nondimensional parameter governed by the residual stress, the film thickness, and a fracture resistance. This article reviews the status of understanding concerning the magnitude of this number for various types of adherent film on either brittle or ductile substrates. Important effects of elastic properties, substrate thickness, and yield strength are described.

Thickness Effect on Microstructure and Residual Stress of Annealed Copper Thin Films

2011 ◽  
Vol 681 ◽  
pp. 139-144 ◽  
Author(s):  
Renaud Vayrette ◽  
Christian Rivero ◽  
Sylvain Blayac ◽  
Karim Inal
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Film Thickness ◽  
Crystallite Size ◽  
Annealing Temperature ◽  
Stress Generation ◽  
Thickness Effect ◽  
Electron Backscattered Diffraction ◽  
Electroplated Copper ◽  
Stress Models

In this work, coupled effects of thickness and annealing temperature on both microstructure and residual stress of electroplated copper thin films are studied. Microstructure is investigated by Electron Backscattered Diffraction (EBSD) and residual stress is estimated from samples curvature. All films exhibit highly twinned grains. Except for several microns films, median crystallite size grows with both film thickness and annealing temperature. Concerning residual stress, it decreases, first as the increase of film thickness, and secondly as the decrease of annealing temperature. The comparison between experiments and stress models demonstrates that the root mechanisms of residual stress generation change with annealing temperature. As well as annealing temperature, film thickness determines the level of residual stress through control of microstructure. Furthermore, EBSD investigations confirmed that the relevant microstructural length to define mechanical properties of thin copper films is the median crystallite size.

Residual Stress Analysis of Al Alloy Thin Films by X-Ray Diffraction as a Function of Film Thickness

1988 ◽  
Vol 130 ◽  
Author(s):  
Carla J. Shute ◽  
J. B. Cohen ◽  
D. A. Jeannottea
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Film Thickness ◽  
Stress Analysis ◽  
Metal Film ◽  
High Stress ◽  
Al Alloy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Residual Stress Analysis

AbstractResidual stress has been measured as a function of layer thickness in thin films of an Al alloy on oxidized Si by the x-ray “d” versus sin2ψ technique. Samples with and without a passivation layer were examined. The results show an increase in residual stress with decreasing film thickness for the passivated samples and indicates that the interface between the metal film and SiO2 may be a region of high stress.

The effects of film thickness variations on the residual stress distributions in coated Cr thin films

Strain ◽  
2017 ◽  
Vol 53 (2) ◽  
pp. e12222 ◽  
Author(s):  
Chi-Hui Chien ◽  
Ting-Hsuan Su ◽  
Chung-Ting Wang ◽  
Jia-Lun Gan ◽  
Jhao-Shun Wang
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Film Thickness ◽  
Stress Distributions ◽  
Thickness Variations

The Cracking and Decohesion of Thin Films

1987 ◽  
Vol 108 ◽  
Author(s):  
A. G. Evans ◽  
M. D. Drory ◽  
M. S. Hu
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Yield Strength ◽  
Film Thickness ◽  
Elastic Properties ◽  
Fracture Resistance ◽  
Substrate Thickness ◽  
Dimensional Parameter ◽  
The Status ◽  
Ductile Substrates

ABSTRACTThe cracking and decohesion of thin films can be characterized by critical values of a non-dimensional parameter governed by the residual stress, the film thickness and a fracture resistance. This article describes the status of understanding concerning the magnitude of this number for various types of adherent film on either brittle or ductile substrates. Important effects of elastic properties, substrate thickness and yield strength are described.

Determination of yielding and debonding in Al–Cu thin films from residual stress measurements via diffraction

1991 ◽  
Vol 6 (5) ◽  
pp. 950-956 ◽  
Author(s):  
C.J. Shute ◽  
J.B. Cohen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Film Thickness ◽  
Void Formation ◽  
Thickness Dependence ◽  
A Value ◽  
The Difference ◽  
Thin Polycrystalline ◽  
Si Wafer

The yield strength and interfacial bonding are properties of interest for understanding void formation in thin film interconnect and subsequent failure of VLSI devices. A method is presented to examine the mechanical properties of thin polycrystalline films attached to substrates by measuring the change in thermal residual stress, due to the difference in coefficient of expansion between the film and substrate, as a function of decreasing temperature of the sample. The yield strengths of passivated 0.5, 1.0, and 2.0 μm thin films of Al–2% Cu on oxidized Si wafer substrates have been determined with this method to be 325, 170, and 120 MPa, respectively. Unpassivated films of the same thicknesses were also examined, but yielding did not occur for these films even though the residual stress reached a value of over 400 MPa. The lack of yielding in the unpassivated samples and the thickness dependence of the passivated samples is attributed to the grain size of these materials, which is less than the film thickness for the unpassivated case and greater than the film thickness after passivation. Debonding occurred in the 2 μm unpassivated sample but in none of the others, indicating a thickness dependence of the energy for delamination.

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

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