Low temperature plasma deposition of silicon nitride from silane and nitrogen plasmas

1998 ◽  
Vol 16 (5) ◽  
pp. 2794-2803 ◽  
Author(s):  
Bengi F. Hanyaloglu ◽  
Eray S. Aydil
2005 ◽  
Vol 2 (8) ◽  
pp. 612-617 ◽  
Author(s):  
Rosa Di Mundo ◽  
Riccardo d'Agostino ◽  
Francesco Fracassi ◽  
Fabio Palumbo

2009 ◽  
Vol 610-613 ◽  
pp. 353-356
Author(s):  
Jin She Yuan ◽  
Ming Yue Wang ◽  
Guo Hao Yu

Low-temperature plasma deposition of diamond-like carbon (DLC) and gallium nitride thin-films grown on Si substrate by PECVD was investigated using atomic force microscopy and reflectance spectra for photovoltaic devices application. It was found that the morphological features of the GaN film depend on the substrates under the optimum deposition conditions. The optical band gap of the films was approximately 5.5eV for PECVD DLC and approximately 3.3 eV for PECVD GaN.


2004 ◽  
Author(s):  
Martin T. Soh ◽  
Nick Savvides ◽  
Charles A. Musca ◽  
John M. Dell ◽  
Lorenzo Faraone

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