Low temperature plasma deposition of silicon nitride to produce ultra-reliable, high performance, low cost sealed chip-on-board (SCOB) assemblies

1995 ◽  
Vol 18 (3) ◽  
pp. 471-477 ◽  
Author(s):  
R.M. Kubacki
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
High Performance ◽  
Plasma Deposition ◽  
Low Cost ◽  
Low Temperature Plasma ◽  
Temperature Plasma

A Novel Organosilicon Source for Low Temperature Plasma Deposition of Silicon Nitride-like Thin Films

2005 ◽  
Vol 2 (8) ◽  
pp. 612-617 ◽  
Author(s):  
Rosa Di Mundo ◽  
Riccardo d'Agostino ◽  
Francesco Fracassi ◽  
Fabio Palumbo
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Plasma Deposition ◽  
Low Temperature Plasma ◽  
Temperature Plasma

Low-Temperature Plasma Deposition of Diamond-Like Carbon and III Nitride Thin-Films for Photovoltaic Devices

2009 ◽  
Vol 610-613 ◽  
pp. 353-356
Author(s):  
Jin She Yuan ◽  
Ming Yue Wang ◽  
Guo Hao Yu
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Plasma Deposition ◽  
Diamond Like Carbon ◽  
Low Temperature Plasma ◽  
Photovoltaic Devices ◽  
Temperature Plasma ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gan Film

Low-temperature plasma deposition of diamond-like carbon (DLC) and gallium nitride thin-films grown on Si substrate by PECVD was investigated using atomic force microscopy and reflectance spectra for photovoltaic devices application. It was found that the morphological features of the GaN film depend on the substrates under the optimum deposition conditions. The optical band gap of the films was approximately 5.5eV for PECVD DLC and approximately 3.3 eV for PECVD GaN.

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